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Lüth, H.
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Vescan, L.
Talk (non-conference)
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Lüth, H.
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Vescan, L.
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Talk (non-conference)
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1
Talk (non-conference)
Double-gate MOSFET with vertical layout
Moers, J.
2002
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2
Talk (non-conference)
Investigation of thin MOSFET gate oxides
Goryll, M.
2002
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3
Talk (non-conference)
Vertical double-gate MOSFET based on epitaxial growth by LPCVD
Moers, J.
2001
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4
Talk (non-conference)
Morphological transition of Ge islands on Si(001) grown by LPCVD
Goryll, M.
2000
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5
Talk (non-conference)
Morphological transition of Ge islands on Si(001) grown by LPCVD
Goryll, M.
2000
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6
Talk (non-conference)
Vertical silicon MOSFETs based on selective epitaxial growth
Moers, J.
2000
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7
Talk (non-conference)
Carbon-induced Ge islands on Si(001) grown by LPCVD
Goryll, M.
2000
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8
Talk (non-conference)
SiGe island formation by post-growth anneal on supercritical layers grown by RPCVD
Grimm, K.
2000
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9
Talk (non-conference)
Shape transition and photoluminescence of Ge islands on Si(001) grown by LPCVD
Goryll, M.
2000
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10
Talk (non-conference)
Morphological transition of Ge islands on Si(001) grown by LPCVD
Goryll, M.
2000
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11
Talk (non-conference)
Shape transition of Ge islands on Si(001) grown by LPCVD
Goryll, M.
2000
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12
Talk (non-conference)
Vertikale Si-MOSFETs mit reduzierten parasitären Kapazitäten
Moers, J.
1999
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13
Talk (non-conference)
Selectively grown vertical Si MOS transistor with reduced overlap capacitances
Klaes, D.
1998
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13
Document Type
Talk (non-conference)
Name
Lüth, H.
Vescan, L.
Goryll, M.
8
Moers, J.
6
Kordos, P.
5
Marso, M.
4
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Klaes, D.
3
Trellenkamp, Stefan
3
Tönnesmann, A.
3
Marso, M. A.
2
Wickenhäuser, S.
2
Fox, P. T.
1
Grabolla, T.
1
Grimm, K.
1
Grimm, M.
1
Hogg, S.
1
Kluth, P.
1
Mantl, S.
1
Nanver, L. K.
1
Visser, C. C. G.
1
Zhao, Q.-T.
1
van der Hart, A.
1
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Research Program
Halbleiterschichtsysteme und Mesoskopische Strukturen
8
Halbleiterbauelemente und Analytik
4
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
2
Contributing Institute
Institut für Schicht- und Ionentechnik; ISI
10
Institut für Halbleiterschichten und Bauelemente; ISG-1
3
Scientific Report
2000
8
2002
2
1998
1
1999
1
2001
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