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1

Journal Article

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

Mikulics, M.
2012

Physica status solidi / C, 9 (2012) S. 911-914

2

Journal Article

Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M.
2012

Semiconductor science and technology, 27 (2012) S. 105008

3

Journal Article

Quantum transport in narrow-gap semiconductor nanocolumns

Lüth, H.
2010

Physica status solidi / C, 7 (2010) S. 386 - 389

4

Journal Article

Electrical transport properties of single undoped and n-type doped InN nanowires

Richter, T.
2009

Nanotechnology, 20 (2009) S. 405206

5

Conference Presentation

Semiconductor nanowires as building blocks for quantum devices

Schäpers, T.
2009

6

Talk (non-conference)

Quantum Transport in Narrow-Gap Semiconductor Nanocolumns

Lüth, H.
2009

7

Journal Article

Investigation on Localized States in GaN Nanowires

Polenta, L.
2008

ACS nano, 2 (2008) S. 287 - 292

8

GaN and InN Nanowires for Information Technology

Calarco, R.
2008

9

Talk (non-conference)

Si-doping Effect on GaN and InN MBE-grown Nanowires

Calarco, R.
2008

10

Talk (non-conference)

Self assembled III-N based nanowires: growth and characterization

Calarco, R.
2008

11

Journal Article

Temperature-dependence of the phase-coherence length in InN nanowires

Blömers, C.
2008

Applied physics letters, 92 (2008)

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12

Journal Article

Phase-coherent transport in InN nanowires of various sizes

Blömers, C.
2008

Physical Review B Physical review / B, 77 77 (2008 2008) 20 20, S. 201301 201301

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13

Journal Article

Acoustic charge transport in GaN nanowires

Ebbecke, J.
2008

Nanotechnology, 19 (2008) S. 275708

14

Journal Article

Flux Quantisation Effects in InN Nanowires

Richter, T.
2008

Nano letters, 8 (2008) S. 2834 - 2838

15

Journal Article

Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements

Richter, T.
2008

Nano letters, 8 (2008) S. 3056 - 3059

16

Photoconductivity investigation of GaN nanowires: focus on localised states

Calarco, R.
2008

17

Talk (non-conference)

GaN nanowires for nano-optoelectronic applications

Calarco, R.
2008

18

Size Dependence of GaN and InN Nanowire Properties

Calarco, R.
2007

19

Journal Article

Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers

Cámara Mayorga, I.
2006

Journal of applied physics, 100 (2006) S. 043116-1 - 043116-4

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20

Journal Article

An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2006

Physica status solidi / C, 3 (2006) S. 2261 - 2264

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