JuLib | Articles & more - {2005}

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1

Conference Presentation

Lumineszenz von gewachsenen und geätzten GaN-Nanosäulen

Thillosen, N.
2005

“...2005...”

2

The effect of carrier gas on GaN epilayer characteristics

Cho, Y. S.
2005

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3

Journal Article

High frequency investigation of graded gap injectors for GaAs Gunn diodes

Montanari, S.
2005

Solid state electronics, 49 (2005) S. 245 - 250

“...2005...”

4

Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

“...2005...”

5

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...2005...”

6

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

“...2005...”

7

Conference Presentation

GaN nanowhiskers:Epitaxial groth and electrical transport

Meijers, R.
2005

“...2005...”

8

Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...2005...”

9

Journal Article

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Mikulics, V. V.
2005

Applied physics letters, 86 (2005) S. 211110-1 - 211110-3

“...2005...”
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10

Conference Presentation

Microphotoluminescence studies on single GaN nanocolumns

Thillosen, N.
2005

“...2005...”

11

Surface enhanced Raman scattering by GaN nanocolumns

Meijers, R.
2005

“...2005...”

12

Journal Article

Measurement of overlay accuracy of E-Beam generated patterns for the fabrication of vertical gate all-around transostores

Moers, J.
2005

Verhandlungen der Deutschen Physikalischen Gesellschaft, 40 (2005) S. 279

“...2005...”

13

Conference Presentation

Overlay of E-Beam generated patterns for the application in vertical gate all-arround MOSFET devices

Moers, J.
2005

“...2005...”

14

Journal Article

Transport and noise features in AlGaN/GaN field effect transistors with nanometer-scaling gate length

Vitusevich, S. A.
2005

International journal of nanoscience, 04 (2005) S. 1001 - 1006

“...2005...”

15

Journal Article

Photomixers fabricated on nitrogen-ion-implanted GaAs

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 041106

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16

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

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17

Vertical Resonant Tunneling Diodes in the sub-100 nm Range

Wensorra, J.
2005

“...2005...”

18

Conference Presentation

Fabrication and characterization of a vertical resonant tunneling diode in the sub-100 nm range

Wensorra, J.
2005

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19

Journal Article

Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire

Cade, N. I.
2005

Nanotechnology, 16 (2005) S. 307 - 311

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20

Journal Article

Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length

Vitusevich, S. A.
2005

Applied physics letters, 87 (2005) S. 192110

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