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1

Poster

GaN and InN Nanowires for Information Technology

Calarco, R.
2008

2

Talk (non-conference)

Si-doping Effect on GaN and InN MBE-grown Nanowires

Calarco, R.
2008

3

Talk (non-conference)

Self assembled III-N based nanowires: growth and characterization

Calarco, R.
2008

4

Journal Article

Acoustic charge transport in GaN nanowires

Ebbecke, J.
2008

Nanotechnology, 19 (2008) S. 275708

5

Journal Article

Temperature-dependence of the phase-coherence length in InN nanowires

Blömers, C.
2008

Applied physics letters, 92 (2008)

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6

Journal Article

Phase-coherent transport in InN nanowires of various sizes

Blömers, C.
2008

Physical Review B Physical review / B, 77 77 (2008 2008) 20 20, S. 201301 201301

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7

Journal Article

Investigation on Localized States in GaN Nanowires

Polenta, L.
2008

ACS nano, 2 (2008) S. 287 - 292

8

Poster

Size Dependence of GaN and InN Nanowire Properties

Calarco, R.
2007

9

Journal Article

Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs

Mikulics, M.
2006

IEEE photonics technology letters, 18 (2006) S. 820 - 822

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10

Journal Article

Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

Mikulics, M.
2006

Applied physics letters, 88 (2006) S. 041118

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11

Journal Article

Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 071103

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12

Journal Article

An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2006

Physica status solidi / C, 3 (2006) S. 2261 - 2264

13

Journal Article

Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers

Cámara Mayorga, I.
2006

Journal of applied physics, 100 (2006) S. 043116-1 - 043116-4

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14

Journal Article

Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors

Kordos, P.
2006

Semiconductor science and technology, 21 (2006) S. 67 - 71

15

Journal Article

Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs

Marso, M.
2006

IEEE Transactions on Electron Devices, 53 (2006) S. 1517 - 1523

16

Journal Article

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2006

Physica status solidi / A, 203 (2006) S. 1876 - 1881

17

Journal Article

Defect Distribution along Single GaN Nanowhiskers

Cavallini, A.
2006

Nano letters, 6 (2006) S. 1548 - 1551

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18

Journal Article

GaAs photodetectors prepared by high-energy and higt-dose nitrogen implantation

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 091103

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19

Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

20

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

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