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Lüth, H.
Halbleiter-Nanoelektronik; IBN-1
AND
Zentralabteilung für Chemische Analysen; ZCH
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Lüth, H.
Halbleiter-Nanoelektronik; IBN-1
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Zentralabteilung für Chemische Analysen; ZCH
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1
Journal Article
Formation of GaN nanodots on Si (111) by droplet nitridation
Debnath, R. K.
2009
Journal of crystal growth, 311 (2009) S. 3389 - 3394
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2
Poster
MOVPE of Cr-doped GaN with respect to spintronic applications
Hardtdegen, H.
2008
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3
Poster
MOVPE of Cr-doped GaN: growth development and layer characteristics
Hardtdegen, H.
2008
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4
Poster
Study on the intentional incorporation of Cr in the MOVPE of GaN
Cho, Y. S.
2007
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5
Talk (non-conference)
The Structural Properties of Cr-doped GaN by MOVPE
Cho, Y. S.
2007
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6
Talk (non-conference)
MOVPE of GaN: Cr for Spintronics
Cho, Y. S.
2007
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7
Talk (non-conference)
Wachstumsuntersuchungen zur Cr-dotierung in GaN für die Spinelektronik
Hardtdegen, H.
2007
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8
Journal Article
The growth of Cr-doped GaN by MOVPE towards spintronic applications
Cho, Y. S.
2007
Physica status solidi / A, 204 (2007) S. 72 - 77
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Lüth, H.
Breuer, U.
7
Cho, Y. S.
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Hardtdegen, Hilde
7
Kaluza, N.
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Beschoten, B.
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Bochem, H. P.
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Schäpers, Thomas
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Grützmacher, Detlev
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Schmalbuch, K.
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von der Ahe, M.
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Chambard, G.
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Ruterana, P.
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Wensel, D.
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Wenzel, D.
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Besmehn, A.
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Calarco, R.
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Debnath, R. K.
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Fecioru-Morariu, M.
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Ghadimi, M. R.
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Guzenko, V.
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Jeganathan, K.
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Meijers, R.
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Sutter, E.
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Research Program
Grundlagen für zukünftige Informationstechnologien
8
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
Zentralabteilung für Chemische Analysen; ZCH
Center of Nanoelectronic Systems for Information Technology; CNI
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2007
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