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1

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

Mikulics, M.
2012

Physica status solidi / C, 9 (2012) S. 911-914

2

Journal Article

Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M.
2012

Semiconductor science and technology, 27 (2012) S. 105008

3

Journal Article

Effect of Si-doping on InAs nanowire transport and morphology

Wirths, S.
2011

Journal of applied physics, 110 (2011) S. 053709

Get full text Published under German "Allianz" Licensing conditions on 2011-09-12. Available in OpenAccess from 2011-09-12

4

Journal Article

The growth of Cr-doped GaN by MOVPE towards spintronic applications

Cho, Y. S.
2007

Physica status solidi / A, 204 (2007) S. 72 - 77

5

Journal Article

The effect of carrier gas on GaN epilayer characteristics

Cho, Y. S.
2006

Physica status solidi / C, 3 (2006) S. 1408 - 1411

Get full text OpenAccess

6

Journal Article

The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

Thillosen, N.
2006

Nano letters, 6 (2006) S. 704 - 708

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7

Journal Article

Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0001)

Meijers, R.
2005

Journal of crystal growth, 283 (2005) S. 500

8

Journal Article

Optimierung eines neuen GaN MOVPE-Wachstumsprozesses mit reduzierten parasitären Depositionen

Steins, R.
2004

Verhandlungen der Deutschen Physikalischen Gesellschaft, 39 (2004) S. 204

9

Journal Article

MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry

Kaluza, N.
2004

Journal of crystal growth, 272 (2004) S. 100 - 105

10

Journal Article

Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits

Malindretos, J.
2002

Superlattices and microstructures, 31 (2002) S. 315 - 325

11

Journal Article

The influence of nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

Physica status solidi / A, 188 (2001) S. 647

12

Journal Article

AlGaN/GaN HEMT optimization using the RoundHEMT technology

Marso, M.
2001

Physica status solidi / A, 188 (2001) S. 199

13

Journal Article

AlGaN/GaN round-HEMTs on (111) silicon substrates

Javorka, P.
2001

Electronics letters, 37 (2001) S. 1478

14

Journal Article

Electron transport in modulation-doped GaAs V-groove quantum wires

Schwarz, A.
2000

Physica / E, 7 (2000)

15

Journal Article

Fermi-edge singularities in the photoluminescence spectrum of modulation-doped GaAs v-groove quantum wires

Kim, J. H.
2000

Physica / E, 7 (2000)

16

Journal Article

Fermi-edge singularities in the photoluminescence and magnetooptical spectra of modulation-doped v-groove quantum wires

Maciel, A. C.
2000

Physica / E, 6 (2000) S. 530

17

Journal Article

Preparation of transparent Nb-two-dimensional electron gas contacts by using electron cyclotron resonance

Schäpers, T.
2000

Journal of applied physics, 88 (2000) S. 4440

OpenAccess

18

Journal Article

Adjustment of the critical current in a Nb-InxGa(1-x)As/InP Josephson contact by light exposure

Schäpers, T.
1999

Applied physics letters, 75 (1999) S. 391 - 393

OpenAccess OpenAccess

19

Journal Article

Optical and transport studies of hot electrons in modulation-doped quantum wires

Maciel, A. C.
1999

Physica / B, 272 (1999) S. 101

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