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Lüth, H.
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Kaluza, N.
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Lüth, H.
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1
Poster
MOVPE of Cr-doped GaN: growth development and layer characteristics
Hardtdegen, H.
2008
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2
Poster
MOVPE of Cr-doped GaN with respect to spintronic applications
Hardtdegen, H.
2008
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3
Poster
Study on the intentional incorporation of Cr in the MOVPE of GaN
Cho, Y. S.
2007
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4
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Chromium Doped GaN Layers for Spintronics
Kaluza, N.
2006
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5
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Influences of H2/N2 Carrier Gas Mixtures on the Characteristics of GaN Epilayers
Cho, Y. S.
2006
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6
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Systematic study on the growth mechanism of GaN/sapphire epilayers grown with different H2 and N2 carrier gas
Cho, Y. S.
2006
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7
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The effect of carrier gas on GaN epilayer characteristics
Cho, Y. S.
2005
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8
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MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry
Kaluza, N.
2004
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9
Poster
Epitaxial Growth of Fe on GaN(0001): Structural and Magnetic Properties
Meijers, R.
2004
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9
Document Type
Poster
Name
Hardtdegen, Hilde
9
Kaluza, N.
Lüth, H.
Cho, Y. S.
7
Breuer, U.
4
Schäpers, Thomas
4
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Steins, R.
4
Thillosen, N.
4
Beschoten, B.
3
Bochem, H. P.
3
Grützmacher, Detlev
3
Heidelberger, G.
2
Schmalbuch, K.
2
Wenzel, D.
2
von der Ahe, M.
2
Buchmeier, M.
1
Bürgler, Daniel
1
Calarco, R.
1
Chambard, G.
1
Christen, J.
1
Fecioru-Morariu, M.
1
Ghadimi, M. R.
1
Guzenko, V.
1
Guzenko, V. A.
1
Meijers, R.
1
Ruterana, P.
1
Sofer, Z.
1
Veit, P.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
6
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
3
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
8
Institut für Halbleiterschichten und Bauelemente; ISG-1
6
Halbleiter-Nanoelektronik; IBN-1
3
Zentralabteilung für Chemische Analysen; ZCH
3
Scientific Report
2006
3
2004
2
2008
2
2005
1
2007
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