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Lüth, H. AND Bernát, J.

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik

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Lüth, H. AND Bernát, J.

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik

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Journal Article 6 Conference Presentation 5 Contribution to a book 1 Contribution to a conference proceedings 1 Talk (non-conference) 1

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Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

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Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

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Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

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Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

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Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

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Journal Article

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

Bernát, J.
2005

Electronics letters, 41 (2005) S. 667 - 668

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Contribution to a book
Contribution to a conference proceedings

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

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Talk (non-conference)

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

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Journal Article

Influence of SiO2 and Si3N4 Passivation on AlGaN/GaN/Si HEMT Performance

Javorka, P.
2003

Electronics letters, 39 (2003) S. 1155

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Journal Article

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.
2003

Solid state electronics, 47 (2003) S. 2097 - 2103

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Investigation of traps in AlGaN/GaN HEMTs on silicon substrate

Wolter, M.
2003

Physica status solidi / C (2003) S. 2360 - 2363

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Conference Presentation

Effect of Transistor Geometry on DC and RF Performance of AlGaN/GaN HEMTs on Silicon Substrate

Javorka, P.
2003

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Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

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Publications database 13 Open Access 1

Journal Article 6 Conference Presentation 5 Contribution to a book 1 Contribution to a conference proceedings 1 Talk (non-conference) 1

Bernát, J. Lüth, H. Marso, M. 13 Fox, P. T. 12 Kordos, P. 11 Heidelberger, G. 6 more ... Javorka, P. 5 Wolter, M. 3 Gregusová, D. 2 Heuken, M. 2 Alam, A. 1 Carius, R. 1 Dikme, Y. 1 Gregusova, D. 1 Jansen, R. H. 1 Kalisch, H. 1 Schineller, B. 1 Schäfer, C. 1 von der Hart, A. 1 see all ... less ...

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik

Institut für Halbleiterschichten und Bauelemente; ISG-1 13 Center of Nanoelectronic Systems for Information Technology; CNI 6

2005 6 2003 5 2004 2

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