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Lüth, H.
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Bay, H.
2001
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Lüth, H.
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Bay, H.
2001
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1
Journal Article
The influence of nucleation parameters on GaN buffer layer properties used for HEMT application
Nastase, N.
2001
Physica status solidi / A, 188 (2001) S. 647
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2
Conference Presentation
Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
Alam, A.
2001
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3
Conference Presentation
GaN and AlGaN/GaN HEMT on (111) Silicon Substrates
Alam, A.
2001
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4
Talk (non-conference)
A comparison of the material properties of AlGaN/GaN epilayers for HEMT application grown on different sapphire substrates
Nastase, N.
2001
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5
Poster
On the influence of the nucleation parameters on GaN buffer layer properties used for HEMT application
Nastase, N.
2001
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6
Conference Presentation
The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application
Nastase, N.
2001
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6
Document Type
Conference Presentation
3
Journal Article
1
Poster
1
Talk (non-conference)
1
Name
Alam, A.
6
Bay, H.
Hardtdegen, Hilde
6
Heuken, M.
6
Lüth, H.
Nastase, N.
6
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Schmidt, R.
4
Juergensen, H.
2
Kordos, P.
2
Bremser, M.
1
Dadgar, A.
1
Kocan, M.
1
Krost, A.
1
Marso, M.
1
Schineller, B.
1
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Research Program
Halbleiterschichtsysteme und Mesoskopische Strukturen
6
Ionentechnik
4
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
6
Scientific Report
2001
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