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Lüth, H.
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Bernát, J.
2006
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Lüth, H.
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Bernát, J.
2006
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Journal Article
An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure
Marso, M.
2006
Physica status solidi / C, 3 (2006) S. 2261 - 2264
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Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs
Heidelberger, G.
2006
Physica status solidi / A, 203 (2006) S. 1876 - 1881
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3
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Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs
Marso, M.
2006
IEEE Transactions on Electron Devices, 53 (2006) S. 1517 - 1523
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Bernát, J.
Fox, A.
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Research Program
Grundlagen für zukünftige Informationstechnologien
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Center of Nanoelectronic Systems for Information Technology; CNI
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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