JuLib | Articles & more

1

Journal Article

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Wirths, S.
2014

Thin solid films, 557 (2014) S. 183 - 187

2

Journal Article

Hexagonal GdScO 3 : an epitaxial high-κ dielectric for GaN

Schäfer, A.
2014

Semiconductor science and technology, 29 (2014) 7, S. 075005

3

Journal Article

Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21

van den Hurk, Jan
2014

Physical chemistry, chemical physics, 16 (2014) 34, S. 18217-18225

4

Journal Article

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Reuters, B.
2014

Journal of physics / D, 47 (2014) 17, S. 175103

5

Journal Article

Tensely strained GeSn alloys as optical gain media

Wirths, S.
2013

Applied physics letters, 103 (2013) 19, S. 192110 -

OpenAccess

6

Journal Article

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

Zhang, B.
2013

Nuclear instruments & methods in physics research / B, 307 (2013) S. 408 - 411

7

Conference Presentation

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si

Nichau, Alexander
2013

8

Journal Article

Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

Luong, Gia Vinh
2013

Journal of applied physics, 113 (2013) 20, S. 204902

OpenAccess

9

Journal Article

Structural stratification of Sr 1 − x Ca x RuO 3 thin films: Influence of aging process

Młynarczyk, Marcin
2013

Physica status solidi / A, 210 (2013) 2, S. 239 - 254

10

Journal Article

Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy

Rodenbücher, C.
2013

Applied physics letters, 103 (2013) 16, S. 162904 -

OpenAccess

11

Conference Presentation

Epitaxial growth studies of SiGe and SiGeSn

Wirths, S.
2013

12

Journal Article

Cluster-like resistive switching of SrTiO 3 :Nb surface layers

Rodenbücher, C
2013

New journal of physics, 15 (2013) 10, S. 103017 -

OpenAccess

13

Conference Presentation

SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications

Wirths, Stephan
2013

Get full text OpenAccess

14

Journal Article

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Wirths, Stephan
2013

Solid state electronics, 83 S. 2 - 9

15

Journal Article

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si

Nichau, Alexander
2013

Microelectronic engineering, 109 S. 109 - 112

16

Journal Article

Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface

Nichau, Alexander
2013

The @journal of chemical physics, 138 (2013) 15, S. 154709

OpenAccess

17

Conference Presentation

Growth of graded doped Si/SiGe Heterostructure Tunnel FET

Wirths, S.
2013

18

Journal Article

Dopant mapping of Be delta-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

Ebert, Philipp
2012

Applied physics letters, 101 (2012) 19, S. 192103

Get full text Published under German "Allianz" Licensing conditions on 2012-11-06. Available in OpenAccess from 2012-11-06

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