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MOVPE of Cr-doped GaN with respect to spintronic applications

Hardtdegen, H.
2008

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MOVPE of Cr-doped GaN: growth development and layer characteristics

Hardtdegen, H.
2008

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Spin-orbit coupling in AlGaN/GaN 3-dimensional electron gases and quantum wires

Schäpers, T.
2008

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Influence of precursor access on structure and morphology of AlN layers grown by MOVPE

Ferreyra, R.A.
2007

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Study on the intentional incorporation of Cr in the MOVPE of GaN

Cho, Y. S.
2007

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An old technique (Umweganregungen) for X-ray characterization of an epitaxial new material (Cr-doped gaN)

von der Ahe, M.
2007

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The Structural Properties of Cr-doped GaN by MOVPE

Cho, Y. S.
2007

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MOVPE of GaN: Cr for Spintronics

Cho, Y. S.
2007

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Wachstumsuntersuchungen zur Cr-dotierung in GaN für die Spinelektronik

Hardtdegen, H.
2007

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Strukturelle Charakterisierung von Chrom dotiertem GaN

von der Ahe, M.
2007

11

Properties of MOVPE grown (Ga,Cr)N layers for spintronic applications

Kaluza, N.
2007

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Suppression of weak antilocalization in AlxGa1-xN/GaN two-dimensional electron gas by an in-plane magnetic field

Cabanas, S.
2007

Physical Review B Physical review / B, 75 75 (2007 2007) 19 19, S. 195329 195329

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Investigation of AlN growth on sapphire substrates in a horizontal MOVPE reactor

Sofer, Z.
2007

Journal of physics and chemistry of solids, 68 (2007) S. 1131 - 1134

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Enhanced spin-orbit scattering length in narrow AlxGa1-xN/GaN wires

Lehnen, P.
2007

Physical Review B Physical review / B, 76 76 (2007 2007) 20 20, S. 205307 205307

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15

Contribution to a book
Contribution to a conference proceedings

The growth mechanism of GaN with different H2/N2 carrier gas ratios

Cho, Y. S.
2007

Journal of crystal growth, 307 (2007) S. 6 - 13

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Effect of small doses of gamma-radiation treatment on transport properties of AlGaN/GaN heterostructures

Kurakin, A. M.
2007

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New approaches for growth control of GaN-based HEMT structures

Hardtdegen, H.
2007

Applied physics / A, 87 (2007) S. 491 - 498

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Influence of the reactor inlet configuration on the AlGaN growth efficiency

Yakovlev, E. V.
2007

Journal of crystal growth, 298 (2007) S. 413 - 417

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Intra-atomic photoluminescence at 1.41 eV of substitutional Mn in GaMnN of high optical quality

Zenneck, J.
2007

Journal of applied physics, 101 (2007) S. 063504

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