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1

Journal Article

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

Schroeder, H.
2010

Journal of applied physics, 107 (2010) S. 054517

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2

Microstructure modifications in Pt/TiO2/Pt nanostructures during and after electroforming and resistance switching

Pandian, R.
2010

3

Conference Presentation

TEM observations of microstructure modifications in Pt/TiO2/Pt nano-structures during (in-situ) and after electroforming and resistance switching

Schroeder, H.
2010

4

Conference Presentation

The time dilemma of pure electronic mechanisms in resistive switching memory cells

Schroeder, H.
2010

5

Journal Article

Study on the dynamic resistance switching properties of NiO thin films

Kügeler, C.
2010

Thin solid films, 518 (2010) S. 2258 - 2260

6

Talk (non-conference)

In-situ Experimente im Transmissionselektronenmikroskop zu den Mechanismen des resistiven Schaltens in Oxiden für nicht-flüchtige Datenspeicher

Schroeder, H.
2009

7

Conference Presentation

The time dilemma of pure electronic mechanisms in resistive switching memory cells

Schroeder, H.
2009

8

Conference Presentation

The time dilemma of pure electronic mechanisms in resistive switching memory cells with transition metal oxide dielectrics

Schroeder, H.
2009

9

Conference Presentation

TEM observations of structural modifications in Pt/TiO2/Pt nanostructures during electroforming and resistance switching

Pandian, R.
2009

10

Feasibility of resistive switching based on purely electronic mechanisms

Waser, R.
2009

11

Journal Article

Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell

Jeong, D. S.
2009

Physical Review B Physical review / B, 79 79 (2009 2009) 19 19, S. 195317 195317

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12

Journal Article

Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells

Jeong, D. S.
2009

Nanotechnology, 20 (2009)

13

Conference Presentation

Strontium ruthenate (SRO) - strontium titanate (STO) thin film capacitor by RF sputtering for DRAM application

Schmelzer, S.
2009

14

Leakage current in high-k materials for DRAM application - thickness dependence revisited

Schroeder, H.
2008

15

Conference Presentation

A Pt/TiO2/Pt Capacitor Stack as Nonvolatile ReRAM: Switching Characteristics and Microstructural Characterization

Schroeder, H.
2008

16

Effect of external oxygen on the electroforming behavior of Pt/TiO2/Pt

Jeong, D. S.
2008

17

The thickness dependence of the leakage current in MIM thin film capacitor stacks with high-k materials for future DRAM application

Schroeder, H.
2008

18

Leakage current in high-k thin film capacitor stacks

Schroeder, H.
2008

19

Conference Presentation

Thickness dependence of leakage current through capacitor stacks with high-k materials for DRAM application

Schroeder, H.
2008

20

Conference Presentation

Very high-k oxide dielectric on silicon chip for capacitive stimulation of nerve cells

Mesic, B.
2008

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