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1

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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2

Conference Presentation

Effective mass and I-V characterization of biaxial tensile strained SOI MOSFETs

Feste, S. F.
2010

3

Contribution to a book
Contribution to a conference proceedings

Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs

Feste, S. F.
2010

4

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

5

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

6

Journal Article

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.
2009

Applied physics letters, 95 (2009) S. 182101

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7

Journal Article

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Sandow, C.
2009

Solid state electronics, 53 (2009) S. 1126 - 1129

8

Journal Article

Silicon Nanowire FETs with Uniaxial Tensile Strain

Feste, S. F.
2009

Solid state electronics, 53 (2009) S. 1257 - 1262

9

Investigation of Arsenic dopant segregation layers for scaled Schottky-Barrier MOSFETs

Feste, S. F.
2009

10

Talk (non-conference)

Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI

Feste, S. F.
2009

11

Contribution to a book
Contribution to a conference proceedings

Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI

Feste, S. F.
2009

12

Talk (non-conference)

Variability in SOI Schottky Barrier MOSFETs

Feste, S. F.
2008

13

Talk (non-conference)

Scaling issues of Schottky barrier metal-oxide-semiconductor field-effect transistors with dopant segregation

Feste, S. F.
2008

14

Contribution to a book
Contribution to a conference proceedings

Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

Sandow, C.
2008

15

Band-to-Band tunneling transistors on Silicon On Insulator substrates

Sandow, C.
2008

16

Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

Sandow, C.
2008

17

Journal Article

Many-body approach to the terahertz response of Wigner molecules in gated nanowire structures

Indlekofer, K.M.
2008

Physical Review B Physical review / B, 77 77 (2008 2008) 12 12, S. 125436 125436

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18

Journal Article

Fabrication of uniaxially strained silicon nanowires

Feste, S. F.
2008

Thin solid films, 517 (2008)

19

Journal Article

Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs

Zhang, M.
2008

IEEE Transactions on Electron Devices, 55 (2008) S. 858 - 865

20

Journal Article

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
2008

Journal of applied physics, 104 (2008) S. 044908

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