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Institut für Grenzflächen und Vakuumtechnologien; ISG-3
Myslivecek, J.
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Institut für Grenzflächen und Vakuumtechnologien; ISG-3
Myslivecek, J.
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Conference Presentation
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1
Conference Presentation
Effects of Limited Growth Kinetics in Homo- and Heteroepitaxy of Semiconductors
Myslivecek, J.
2005
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2
Conference Presentation
STM Contrast between Ge and Si Atoms Incorporated in the Si(111)-3x-3-Bi Surface - Formation and Decay of Si/Ge Nanostructures at the Atomic Level
Myslivecek, J.
2005
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Conference Presentation
Formation and Decay of Si/Ge Nanostructures at the Atomic Level
Voigtländer, B.
2005
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4
Conference Presentation
Formation and Decay of Si/Ge Nanostructures at the Atomic Level
Voigtländer, B.
2005
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5
Conference Presentation
Formation of SiGe Nanostructures on the Atomic Level
Cherepanov, V.
2005
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6
Poster
Single Molecules in a Low Temperature Scanning Tunnelling Microscope
Myslivecek, J.
2005
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Poster
Formation and Decay of Si/Ge Nanostructures at the Atomic Level
Voigtländer, B.
2005
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7
Document Type
Conference Presentation
5
Poster
2
Name
Myslivecek, J.
Voigtländer, B.
7
Cherepanov, V.
4
Paul, N.
4
Strozecka, A.
2
Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
7
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
7
Institut für Grenzflächen und Vakuumtechnologien; ISG-3
Scientific Report
2005
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