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1

Conference Presentation

MOVPE III-nitride growth for high frequency and/or high power application

Hardtdegen, H.
2005

2

Journal Article

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Mikulics, V. V.
2005

Applied physics letters, 86 (2005) S. 211110-1 - 211110-3

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3

Journal Article

Growth and properties of GaN and AlN layers on silver substrates

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 212109

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4

Journal Article

Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors

Marso, M.
2005

Physica status solidi / C, 2 (2005) S. 2611 - 2614

5

Journal Article

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

Hardtdegen, H.
2005

Physica status solidi / A, 202 (2005) S. 744 - 748

6

Journal Article

Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress

Bernát, J.
2004

Solid state electronics, 48 (2004) S. 1825 - 1828

7

Contribution to a book
Contribution to a conference proceedings

Influence of doping density on small- and large-signal characteristics of AlGaN/GaN/SiC HEMTs

Fox, P. T.
2004

8

Journal Article

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

Kuzmik, J.
2004

Solid state electronics, 48 (2004) S. 271 - 276

9

Dissertation / PhD Thesis

Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors

Javorka, P.
2004

10

Journal Article

Influence of a carrier supply layer on carrier density and drift mobility of AlGaN/GaN/SiC high-electron-mobility transistors

Marso, M.
2004

Applied physics letters, 84 (2004) S. 2928 - 2930

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11

Contribution to a book
Contribution to a conference proceedings

MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures

Marso, M.
2004

12

Conference Presentation

Influence of doping density on small- and large-signal characteristics of AlGaN/GaN/SiC HEMTs

Fox, P. T.
2004

13

Talk (non-conference)

MSM varactor diodes based on AlGaN/ GaN/SiC HEMT layer structures

Marso, M.
2004

14

Talk (non-conference)

Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors

Marso, M.
2004

15

Journal Article

Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation

Bernat, P. F.
2004

Journal of electronic materials, 33 (2004) S. 436 - 439

16

Conference Presentation

Optimization of nitride growth in single wafer horizontal MOVPE reactors for HEMTs

Kaluza, N.
2004

17

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

Hardtdegen, H.
2004

18

Conference Presentation

Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates

Dikme, Y.
2003

19

Conference Presentation

Silicon (111) as alternative substrate for AlGaN/GaN HEMT

Dikme, Y.
2003

20

Journal Article

Si(111) as alternative substrate for AlGaN/GaN HEMT

Dikme, Y.
2003

Physica status solidi / C (2003) S. 2385 - 2388

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