JuLib | Articles & more

1

Conference Presentation

Influence of layer structure and surface passivation on performance of AlGaN/GaN HEMTs on Si and SiC substrates

Bernát, J.
2003

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2

Conference Presentation

Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates

Dikme, Y.
2003

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3

Conference Presentation

Silicon (111) as alternative substrate for AlGaN/GaN HEMT

Dikme, Y.
2003

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4

Journal Article

HTS SQUID Gradiometer Using Substrate Resonators Operating in an Unshielded Environment - a Portable MCG System

Zhang, Y.
2003

IEEE transactions on applied superconductivity, 13 (2003) S. 389 - 392

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5

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

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6

Journal Article

Magnetic properties of Nm and Cr implanted GaN layers

Guzenko, V. A.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 285

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7

Journal Article

Noise, Junction Characteristics, and Magnetic Field Dependencies of Bicrystal Grain Boundary Junction rf-SQUIDs

Fardmanesh, M.
2003

IEEE transactions on applied superconductivity, 13 (2003) S. 873 - 876

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8

Journal Article

Junction Characteristics and Magnetic Field Dependence of Low Noise Step Edge Junction rf-SQUIDs for Unshielded Applications

Fardmanesh, M.
2003

IEEE transactions on applied superconductivity, 13 (2003) S. 833 - 836

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9

Journal Article

Rashba effect in strained InGaAs/InP quantum wire structures

Schäpers, T.
2003

Science and technology of advanced materials, 4 (2003) S. 19 - 25

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10

Conference Presentation

Transport and noise features in AlGaN/GaN field effect transistors with nanometerscaling gate length

Vitusevich, S. A.
2003

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11

Journal Article

On the LO-polaron dispersion in D dimensions

Gerlach, B.
2003

Physica status solidi / B, 237 (2003) S. 204

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12

Journal Article

Coherent resistance of a disordered one-dimensional wire: Expressions for all moments and evidence for non-Gaussian distribution

Vagner, P.
2003

Physical Review B Physical review / B, 67 67 (2003 2003) 16 16, S. 165316 165316

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13

Journal Article

Control of interference effects in a two-dimensional-electron-gas superconductor junction by the Josephson effect

Schäpers, T.
2003

Physical Review B Physical review / B, 67 67 (2003 2003) 6 6, S. 060502 060502

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14

Journal Article

Si(111) as alternative substrate for AlGaN/GaN HEMT

Dikme, Y.
2003

Physica status solidi / C (2003) S. 2385 - 2388

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15

Conference Presentation

Optimierung eines neuen GaN Prozesses im Hinblick auf Homogenität

Steins, R.
2003

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16

Conference Presentation

Use of Modeling to Develop a New GaN Growth Process with Reduced Parasitic Deposits

Kaluza, N.
2003

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17

Conference Presentation

MOVPE GaN Growth: Determination of Activation Energy Using In-Situ Reflectometry

Kaluza, N.
2003

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18

Talk (non-conference)

High Electron Mobility Transistoren: von der Schichtherstellung bis zum Bauelement

Hardtdegen, H.
2003

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19

Talk (non-conference)

Chemical Vapor Deposition

Hardtdegen, H.
2003

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20

Poster

Ultra-high electric field transport in GaN-based heterostructures

Vitusevich, S. A.
2003

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