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Institut für Halbleiterschichten und Bauelemente; ISG-1
Contribution to a book
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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Preparation and characterization of rare earth scandates as alternative gate oxide materials
Wagner, M.
2005
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Dopant segregation in Schottky barrier SOI-MOSFETs
Zhang, M.
2005
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Tuning of NiSi/Si Schottky barrier heights by sulfur segregaton during Ni silicidation and fabrication of Schottky MOSFETs
Zhao, Q. T.
2005
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Mantl, S.
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Lenk, Steffi
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Zhang, M.
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Zhao, Q. T.
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Afanas'ev, V. V.
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Breuer, U.
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Grundlagen für zukünftige Informationstechnologien
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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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Center of Nanoelectronic Systems for Information Technology; CNI
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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2005
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