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1

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Wang, Yuhan
2020

Physical review / B, 102 (2020) 24, S. 245304

OpenAccess

2

Journal Article

Interplay of intrinsic and extrinsic states in pinning and passivation of m -plane facets of GaN n - p - n junctions

Freter, Lars
2020

Journal of applied physics, 128 (2020) 18, S. 185701 -

Published on 2020-11-09. Available in OpenAccess from 2021-11-09.

3

Journal Article

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs 1– x Sb x Shell on InAs Nanowires

Schnedler, M.
2019

Nano letters, 19 (2019) 12, S. 8801 - 8805

Get full text Published on 2019-11-21. Available in OpenAccess from 2020-11-21. Published on 2019-11-21. Available in OpenAccess from 2020-11-21. Published on 2019-11-21. Available in OpenAccess from 2020-11-21.

4

Journal Article

Composition modulation by twinning in InAsSb nanowires

Schnedler, M.
2019

Nanotechnology, 30 (2019) 32, S. 324005 -

5

Journal Article

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Portz, V.
2018

Physical Review B Physical review / B, 97 97 (2018 2018) 11 11, S. 115433 115433

OpenAccess

6

Journal Article

Fermi-level pinning and intrinsic surface states of Al$_{1−x}$In$_{x}$N(101¯0) surfaces

Portz, V.
2017

Applied physics letters, 110 (2017) 2, S. 022104 -

OpenAccess OpenAccess

7

Journal Article

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Hsiao, F.-M.
2017

Journal of applied physics, 121 (2017) 1, S. 015701 -

OpenAccess OpenAccess

8

Journal Article

Lazarevicite-type short-range ordering in ternary III-V nanowires

Schnedler, M.
2016

Physical Review B Physical review / B, 94 94 (2016 2016) 19 19, S. 195306 195306

OpenAccess OpenAccess

9

Journal Article

Intrinsic electronic properties of high-quality wurtzite InN

Eisele, H.
2016

Physical Review B Physical review / B, 94 94 (2016 2016) 24 24, S. 245201 245201

OpenAccess OpenAccess

10

Journal Article

Strain and compositional fluctuations in Al$_{0.81}$In$_{0.19}$N/GaN heterostructures

Portz, V.
2016

Applied physics letters, 109 (2016) 13, S. 132102 -

OpenAccess OpenAccess

11

Journal Article

Polarity-dependent pinning of a surface state

Schnedler, M.
2015

Physical Review B Physical review / B, 91 91 (2015 2015) 20 20, S. 205309 205309

OpenAccess OpenAccess

12

Journal Article

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Weidlich, P. H.
2015

Journal of applied physics, 118 (2015) 3, S. 035302 -

OpenAccess OpenAccess

13

Journal Article

Meandering of overgrown v-shaped defects in epitaxial GaN layers

Weidlich, Phillip
2014

Applied physics letters, 105 (2014) S. 012105

OpenAccess

14

Conference Presentation

Mass Transfers during Growth and Capping of In(Ga)As/GaAs Quantum Dots

Eisele, H.
2013

15

Conference Presentation

Details of the Mass Transfers during Growth and Capping of In(Ga)As/GaAs Quantum Dots

Eisele, H.
2013

16

Conference Presentation

Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach

Lymperakis, L.
2013

17

Conference Presentation

News from the non-polar GaN surface: Hidden surface states and intrinsic versus extrinsic Fermi-level pinning

Ebert, Philipp
2013

18

Conference Presentation

Details of the Mass Transfers during Growth and Capping of In(Ga)As/GaAs Quantum Dots

Eisele, H.
2013

19

Journal Article

Hidden surface states at non-polar GaN (1010)facets: Intrinsic pinning of nanowires

Lymperakis, L.
2013

Applied physics letters, 103 S. 152101-1

OpenAccess

20

Journal Article

Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers

Weidlich, Phillip
2013

Applied physics letters, 103 S. 142105-1

OpenAccess

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