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Quanten-Theorie der Materialien; PGI-1
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Halbleiter-Nanoelektronik; PGI-9
Aguilera, Irene
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Quanten-Theorie der Materialien; PGI-1
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Halbleiter-Nanoelektronik; PGI-9
Aguilera, Irene
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1
Journal Article
Low-energy Se ion implantation in MoS2 monolayers
Bui, Minh
2022
npj 2D materials and applications, 6 (2022) 1, S. 42
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2
Poster
Analysis of defect states in MoSe2 and unfolding of defect band structure
Rost, Stefan
2019
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3
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Analysis of defect states in MoSe2 and unfolding of defect band structure
Rost, Stefan
2019
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4
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Analysis of defect states in MoSe2 and unfolding of defect band structure
Rost, Stefan
2019
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5
Journal Article
Infrared/terahertz spectra of the photogalvanic effect in (Bi,Sb)Te based three-dimensional topological insulators
Plank, H.
2018
Physical review materials, 2 (2018) 2, S. 024202
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6
Journal Article
Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_{2}$ bulk crystals
Gehlmann, Mathias
2016
Scientific reports, 6 (2016) S. 26197
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6
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Journal Article
3
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1
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Aguilera, Irene
Blügel, Stefan
5
Kardynal, Beata
5
Rost, Stefan
4
Friedrich, Christoph
3
Grützmacher, Detlev
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Auge, Manuel
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Bangert, Ursel
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Bihlmayer, Gustav
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Bui, Minh
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Cramm, Stefan
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Danilov, S. N.
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Döring, Sven
1
Eschbach, Markus
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Ganichev, S. D.
1
Gebert, S.
1
Gehlmann, Mathias
1
Ghorbani-Asl, Mahdi
1
Gospodaric, Pika
1
Hashemi, Arsalan
1
Hofsäss, Hans C.
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Jin, Lei
1
Kampmeier, Jörn
1
Kibkalo, Lidia
1
Komsa, Hannu-Pekka
1
Krasheninnikov, Arkady V.
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König-Otto, J.
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Lanius, Martin
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Mussler, Gregor
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Research Program
Controlling Configuration-Based Phenomena
3
Controlling Spin-Based Phenomena
3
Topological Matter
3
Magnetic Anisotropy of Metallic Layered Systems and Nanostructures
1
Quantum Networking
1
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
JARA - HPC; JARA-HPC
6
JARA-FIT; JARA-FIT
6
Quanten-Theorie der Materialien; IAS-1
6
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