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Yu, W.
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Contribution to a book
Contribution to a conference proceedings
Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Yu, W.
2010
“
...
Halbleiter
-
Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
”
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2
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Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Zhang, B.
2010
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...
Halbleiter
-
Nanoelektronik
;
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-
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Halbleiter-Nanoelektronik...
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3
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MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
Yu, W.
2010
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...
Halbleiter
-
Nanoelektronik
;
IBN
-
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Halbleiter-Nanoelektronik...
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4
Contribution to a book
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Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Zhang, B.
2010
“
...
Halbleiter
-
Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
”
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5
Contribution to a book
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Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs
Yu, W.
2010
“
...
Halbleiter
-
Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
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Buca, Dan Mihai
5
Mantl, S.
5
Yu, W.
Zhang, B.
5
Zhao, Q. T.
5
Bourdelle, K.K.
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Hartmann, J.M.
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Luptak, R.
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Dürgün-Özben, Eylem
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Schubert, Jürgen
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Lopes, J. M. J.
2
Nichau, A.
2
Wang, X.
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Ghyselen, B.
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Hagedorn, M.
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Hartmann, J.-M.
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Holländer, Bernhard
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Lenk, Steffi
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Minamisawa, R. A.
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
5
JARA-FIT; JARA-FIT
5
Scientific Report
2010
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