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Heeg, T.
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Heeg, T.
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Select result number 1
1
Poster
Curie temperature of electron-doped EuO - is there an intrinsic limit?
Mairoser, T.
2009
“
...
Halbleiter
-
Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
”
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Select result number 2
2
Poster
MOSFETs with GdScO3 as gate dielectric
Roeckerath, M.
2008
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...
Halbleiter
-
Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
”
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Select result number 3
3
Poster
GdScO3 as gate dielectric on fully depleted SOI- and sSOI-MOSFETs
Roeckerath, M.
2008
“
...
Halbleiter
-
Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
”
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4
Poster
Fully depleted SOI- and sSOI-MOSFETs with GdScO3 as gate dielectric
Lopes, J. M. J.
2008
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...
Halbleiter
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Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
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5
Poster
Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric
Lopes, J. M. J.
2007
“
...
Halbleiter
-
Nanoelektronik
;
IBN
-
1
Halbleiter-Nanoelektronik...
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5
Document Type
Poster
Name
Heeg, T.
Schubert, Jürgen
5
Lopes, J. M. J.
4
Mantl, S.
4
Roeckerath, M.
4
Schlom, D. G.
2
more ...
Afanasiev, V.
1
Böni, P.
1
Canella, L.
1
Jia, Y.
1
Lenk, Steffi
1
Littmark, U.
1
Mairoser, T.
1
Mannhart, J.
1
Melville, A.
1
Schmehl, A.
1
Shamuilia, S.
1
Stesmans, A.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
5
Center of Nanoelectronic Systems for Information Technology; CNI
4
JARA-FIT; JARA-FIT
1
Scientific Report
2008
3
2007
1
2009
1
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