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1

Journal Article

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Wirths, S.
2014

Thin solid films, 557 (2014) S. 183 - 187

2

Contribution to a conference proceedings
Contribution to a book

(Keynote) Epitaxy-Based Strain-Engineering Methods for Advanced Devices

Grutzmacher, D.
2014

3

Journal Article

Quantum dots in InAs nanowires induced by surface potential fluctuations

Weis, Karl
2014

Nanotechnology, 25 (2014) 13, S. 135203

4

Conference Presentation

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si

Nichau, Alexander
2013

5

Conference Presentation

Si compatible Tunneling Field Effect Transistors and Inverters

Mantl, Siegfried
2013

6

Conference Presentation

Si based tunnel field effect transistors: recent achievements

Mantl, Siegfried
2013

7

Conference Presentation

Strained Si nanowire TFETs and Inverters

Zhao, Qing-Tai
2013

8

Journal Article

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S.
2013

Applied physics letters, 102 19, S. 192103 -

OpenAccess

9

Journal Article

Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys

Wirths, S.
2013

ECS journal of solid state science and technology, 2 (2013) 5, S. N99 - N102

10

Journal Article

Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

Luong, Gia Vinh
2013

Journal of applied physics, 113 (2013) 20, S. 204902

OpenAccess

11

Contribution to a book

Epitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6

Wirths, Stephan
2013

12

Investigations of channel direction influence on the effective hole mobility of SOI(110) and highly compressively strained Si0.5Ge0.5/SOI(100) p-MOSFETs

Hagedorn, M.
2013

13

Conference Presentation

SiGeSn epitaxial layers on Ge virtual substrates: Raman scattering and ellipsometry studies

Stoica, T.
2013

14

Conference Presentation

Epitaxial growth studies of SiGe and SiGeSn

Wirths, S.
2013

15

Conference Presentation

Growth of graded doped Si/SiGe Heterostructure Tunnel FET

Wirths, S.
2013

16

Journal Article

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si

Nichau, Alexander
2013

Microelectronic engineering, 109 S. 109 - 112

17

Journal Article

Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

Fournier-Lupien, J. -H.
2013

Applied physics letters, 103 (2013) 26, S. 263103

Get full text OpenAccess

18

Journal Article

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Liu, Linjie
2013

Applied physics letters, 103 (2013) 23, S. 231909 -

OpenAccess

19

Journal Article

Tensely strained GeSn alloys as optical gain media

Wirths, S.
2013

Applied physics letters, 103 (2013) 19, S. 192110 -

OpenAccess

20

Journal Article

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Wirths, Stephan
2013

Solid state electronics, 83 S. 2 - 9

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