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Frontiers of charge based Electronics
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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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Frontiers of charge based Electronics
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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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Journal Article
Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO 3
Schie, Marcel
2012
Journal of physics / Condensed matter, 24 (2012) 48, S. 485002 -
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De Souza, Roger A
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Marchewka, Astrid
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Müller, T.
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Schie, Marcel
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Waser, R.
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Frontiers of charge based Electronics
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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Elektronische Materialien; PGI-7
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