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Ionentechnik
Bay, H.
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Ionentechnik
Bay, H.
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1
Talk (non-conference)
A comparison of the material properties of AlGaN/GaN epilayers for HEMT application grown on different sapphire substrates
Nastase, N.
2001
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Journal Article
The influence of nucleation parameters on GaN buffer layer properties used for HEMT application
Nastase, N.
2001
Physica status solidi / A, 188 (2001) S. 647
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3
Journal Article
Nanometer patterning of thin CoSi2-films by application of local stress
Kluth, P.
2001
Microelectronic engineering, 55 (2001) S. 177
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On the influence of the nucleation parameters on GaN buffer layer properties used for HEMT application
Nastase, N.
2001
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Conference Presentation
Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
Alam, A.
2001
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Journal Article
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Bay, H.
Alam, A.
4
Hardtdegen, Hilde
4
Heuken, M.
4
Lüth, H.
4
Nastase, N.
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Schmidt, R.
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Detavernier, C.
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Juergensen, H.
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Kappius, L.
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Kluth, P.
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Kordos, P.
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Lenk, Steffi
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Mantl, S.
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Marso, M.
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Research Program
Ionentechnik
Halbleiterschichtsysteme und Mesoskopische Strukturen
4
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
5
Scientific Report
2001
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