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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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1
Journal Article
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
AndrÀ, Michael
2020
Advanced electronic materials, 6 (2020) 1, S. 1900808 -
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2
Journal Article
An atomistic view on the Schottky barrier lowering applied to SrTiO 3 /Pt contacts
Funck, Carsten
2019
AIP Advances, 9 (2019) 4, S. 045116 -
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3
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Field-enhanced route to generating anti-Frenkel pairs in HfO 2
Schie, Marcel
2018
Physical review materials, 2 (2018) 3, S. 035002
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4
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A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Funck, Carsten
2018
Advanced electronic materials, 4 (2018) 7, S. 1800062 -
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5
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Ion migration in crystalline and amorphous HfO$_{X}$
Schie, Marcel
2017
The journal of chemical physics, 146 (2017) 9, S. 094508 -
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6
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Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO 3
Schie, Marcel
2012
Journal of physics / Condensed matter, 24 (2012) 48, S. 485002 -
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Research Program
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
Controlling Electron Charge-Based Phenomena
4
Controlling Collective States
1
Frontiers of charge based Electronics
1
Contributing Institute
Elektronische Materialien; PGI-7
6
JARA - HPC; JARA-HPC
6
JARA-FIT; JARA-FIT
4
Elektronische Eigenschaften; PGI-6
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