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1999
Mantl, S.
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Holländer, Bernhard
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1999
Mantl, S.
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Holländer, Bernhard
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1
Talk (non-conference)
Spannungsrelaxation von Si(1-x)Gex/Si Heterostrukturen induziert durch Wasserstoffimplantation
Rongen, S.
1999
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2
Talk (non-conference)
Strain relaxed Si(1-x)Gex layers on Si(100) after hydrogen implantation
Holländer, B.
1999
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3
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New high-precision 5-Axis RBS/channeling goniometer for ion beam analysis of 150 mm wafers
Holländer, B.
1999
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4
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Enhanced strain relaxation of epitaxial SiGe layers on Si(100)after H+ ion implantation
Holländer, B.
1999
Nuclear instruments & methods in physics research / B, 148 (1999) S. 200
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5
Journal Article
Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
Mantl, S.
1999
Nuclear instruments & methods in physics research / B, 147 (1999) S. 29
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6
Journal Article
Silicon quantum integrated circuits : an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques
Paul, D. J.
1999
Thin solid films, 336 (1999) S. 130
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6
Document Type
Journal Article
3
Talk (non-conference)
2
Poster
1
Name
Holländer, Bernhard
Mantl, S.
Herzog, H. J.
3
Kibbel, H.
3
Mesters, S.
3
Hackbarth, T.
2
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Liedtke, R.
2
Rongen, S.
2
Amaud d' Avitaya, F.
1
Berggren, K.-F.
1
Coonan, B.
1
Crean, G. M.
1
Derrien, J.
1
Halling, H.
1
Heer, H.
1
Kuchenbecker, J.
1
Lazzari, J.-L.
1
O'Neill, B. J.
1
Paul, D. J.
1
Redmond, G.
1
Wagener, M.
1
Zouzoulenko, I.
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Research Program
Ionentechnik
6
Contributing Institute
Institut für Schicht- und Ionentechnik; ISI
6
Scientific Report
1999
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