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1999
Mantl, S.
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Liedtke, R.
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1999
Mantl, S.
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Journal Article
Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
Mantl, S.
1999
Nuclear instruments & methods in physics research / B, 147 (1999) S. 29
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Journal Article
Enhanced strain relaxation of epitaxial SiGe layers on Si(100)after H+ ion implantation
Holländer, B.
1999
Nuclear instruments & methods in physics research / B, 148 (1999) S. 200
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Ionentechnik
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Institut für Schicht- und Ionentechnik; ISI
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