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1999
Halbleiterbauelemente und Analytik
Moers, J.
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1999
Halbleiterbauelemente und Analytik
Moers, J.
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Talk (non-conference)
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Talk (non-conference)
Low temperature growth of SiO2 on Si(100) under UHV conditions using a heated molecular beam of tetraethoxysilane
Pirug, G.
1999
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Talk (non-conference)
Vertikale Si-MOSFETs mit reduzierten parasitären Kapazitäten
Moers, J.
1999
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3
Journal Article
Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
Moers, J.
1999
Solid state electronics, 43 (1999) S. 529 - 535
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4
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A 19 Ghz vertical Si p-channel MOSFET
Moers, J.
1999
Electronics letters, 35 (1999) S. 239
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Marso, M. A.
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Moers, J.
Klaes, D.
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Kordos, P.
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Lüth, H.
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Vescan, L.
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Wickenhäuser, S.
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Research Program
Halbleiterbauelemente und Analytik
Contributing Institute
Institut für Schicht- und Ionentechnik; ISI
4
Scientific Report
1999
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