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1

Journal Article

AlN and GaN epitaxial heterojunctions on 6H-SiC(0001) : valence band offset and polarization fields

Rizzi, A.
1999

Journal of vacuum science & technology / B, 17 (1999) S. 1674

2

Journal Article

Evidence for relaxed and high quality growth of GaN on SiC(0001)

Boscherini, P. C.
1999

Applied physics letters, 74 (1999) S. 3308

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3

Journal Article

MBE growth and structural properties of GaN and AlN on 3CSiC(001) substrates

Gerthsen, D.
1999

Journal of crystal growth, 200 (1999) S. 353

4

Journal Article

Influence of the first preparation steps on the properties of GaN layers grown on 6H-SiC by MBE

Lantier, R.
1999

MRS internet journal of nitride semiconductor research, 4S1 (1999) S. G.3.50

5

Journal Article

Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001) : heterojunction electronic properties

Lantier, R.
1999

Physica status solidi / A, 176 (1999) S. 615

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