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41

Lüth, H.
1999

42

Atomic scale analysis of the indium distribution in In-GaAs/GaAs(001) heterostructures : segregation, lateral indium redistribution and the effect of growth interruptions

Rosenauer, A.
1999

Thin solid films, 357 (1999) S. 18

43

Journal Article

AlN and GaN epitaxial heterojunctions on 6H-SiC(0001) : valence band offset and polarization fields

Rizzi, A.
1999

Journal of vacuum science & technology / B, 17 (1999) S. 1674

44

Journal Article

High-confinement SiGe low-loss waveguides for Si-based optoelectronics

Pogossian, S. P.
1999

Applied physics letters, 27 (1999) S. 1440 - 1442

OpenAccess OpenAccess

45

Journal Article

Influence of the first preparation steps on the properties of GaN layers grown on 6H-SiC by MBE

Lantier, R.
1999

MRS internet journal of nitride semiconductor research, 4S1 (1999) S. G.3.50

46

Journal Article

Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001) : heterojunction electronic properties

Lantier, R.
1999

Physica status solidi / A, 176 (1999) S. 615

47

Poster

Modeling of heat transfer and mass transport during AlGaAs growth in N2 and H2 ambient

Hardtdegen, H. H.
1999

48

Journal Article

In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE : a comparison to hydrogen atmosphere

Hardtdegen, H. H.
1999

Journal of crystal growth, 195 (1999) S. 211

49

Contribution to a book
Contribution to a conference proceedings

Characterization of low-temperature GaAs by conductivity : Hall-effect and magnetoresistance measurements

Morvic, M.
1999

50

Poster

Selbstjustierender Prozess zur Herstellung steuerbarer Aharonov-Bohm-Ringe

Krafft, B.
1999

51

Talk (non-conference)

Morphologieuntersuchungen an mit TBAs unter Verwendung von 100% N2 als Trägergas gewachsenen GaAs-Schichten

Kaluza, A.
1999

52

Journal Article

Micro strip X-ray detector with a very high dynamic range based on LPE-GaAs

Kaluza, A.
1999

IEEE transactions on nuclear science, 45 (1999) S. 724

53

Talk (non-conference)

Herstellung und Charakterisierung von V-Graben Quantendrähten im Materialsystem AlGaAs/GaAs

Kaluza, A.
1999

54

Contribution to a book
Contribution to a conference proceedings

Intrinsic bistability effect in delta doped tunneling diodes

Vitusevich, S. A.
1999

55

Journal Article

Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48P

Schmidt, R.
1999

Journal of crystal growth, 195 (1999) S. 124

56

Journal Article

Resonant tunneling effect in delta p-n GaAs junction

Vitusevich, S. A.
1999

Microelectronic engineering, 46 (1999)

57

Journal Article

Optically controlled 2D tunneling in GaAs delta-doped p-n junction

Vitusevich, S. A.
1999

Semiconductor physics, quantum electronics & optoelectronics, 2 (1999) S. 7 - 10

58

Book

Festkörperphysik : Einführung in die Grundlagen

Ibach, H.
1999

59

Journal Article

Evidence for relaxed and high quality growth of GaN on SiC(0001)

Boscherini, P. C.
1999

Applied physics letters, 74 (1999) S. 3308

OpenAccess OpenAccess

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