JuLib | Articles & more - {2005}

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1

Journal Article

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

Hardtdegen, H.
2005

Physica status solidi / A, 202 (2005) S. 744 - 748

“...2005...”

2

Journal Article

Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs

Bernát, J.
2005

Physica status solidi / C, 2 (2005) S. 2676 - 2679

“...2005...”

3

Journal Article

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

Gregusova, D.
2005

Physica status solidi / C, 2 (2005) S. 2619 - 2622

“...2005...”

4

Journal Article

Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors

Marso, M.
2005

Physica status solidi / C, 2 (2005) S. 2611 - 2614

“...2005...”

5

Journal Article

Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0001)

Meijers, R.
2005

Journal of crystal growth, 283 (2005) S. 500

“...2005...”

6

Journal Article

Crack-free BaTiO3 films on Si with SiO2, MgO, or Al2O3 buffer layers

Lipinsky, Th.
2005

Journal of the Optical Society of America / B, 22 (2005) S. 913 - 916

“...2005...”

7

Conference Presentation

Gallium-Nitrid, das neue Wundermaterial der Elektrotechnik und seine Bedeutung im Alltag

Marso, M.
2005

“...2005...”

8

Contribution to a book
Contribution to a conference proceedings

Tuning of NiSi/Si Schottky barrier heights by sulfur segregaton during Ni silicidation and fabrication of Schottky MOSFETs

Zhao, Q. T.
2005

“...2005...”

9

Contribution to a book
Contribution to a conference proceedings

Dopant segregation in Schottky barrier SOI-MOSFETs

Zhang, M.
2005

“...2005...”

10

Journal Article

High frequency investigation of graded gap injectors for GaAs Gunn diodes

Montanari, S.
2005

Solid state electronics, 49 (2005) S. 245 - 250

“...2005...”

11

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

“...2005...”
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12

Journal Article

Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts

Knoch, J.
2005

Solid state electronics, 49 (2005) S. 73 - 76

“...2005...”

13

Journal Article

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

Zhang, M.
2005

Electronics letters, 41 (2005) S. 1085 - 1086

“...2005...”

14

Conference Presentation

Traveling-wave photonic mixers on LT-GaAs for increased continuous terahertz power

Mikulics, V. V.
2005

“...2005...”

15

Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

“...2005...”

16

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...2005...”

17

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

“...2005...”

18

Conference Presentation

GaN nanowhiskers:Epitaxial groth and electrical transport

Meijers, R.
2005

“...2005...”

19

Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...2005...”

20

Conference Presentation

Adjustable hydrogen atom incorporation into sputter deposited a-SiC

Tschersich, K. G.
2005

“...2005...”

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