JuLib | Articles & more

1

Journal Article

Development of a thin-film sensor array for analytical monitoring of heavy metals in aqueous solutions

Spelthahn, H.
2012

Physica status solidi / A, 209 (2012) S. 885 - 891

2

Journal Article

Detectivity Analysis and Optimization of Large-Area Freestanding-Type HTS Bolometers

Moftakharzadeh, A.
2012

IEEE transactions on applied superconductivity, 22 (2012) S. 2100107

3

Journal Article

Quanternary Enhancement-Mode HFET With In Situ SiN Passivation

Ketteniss, N.
2012

IEEE Electron Device Letters, 33 (2012) S. 519 - 521

4

Journal Article

Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices

Ketteniss, N.
2012

Semiconductor science and technology, 27 (2012) S. 055012

5

Journal Article

p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures

Minamisawa, R.A.
2012

Journal of the Electrochemical Society, 159 (2012) S. H44 - H51

6

Conference Presentation

Characterization of Lanthanum Lutetium oxide high k / metal gate stacks for CMOS process integration

Nichau, A.
2012

7

Journal Article

LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process

Nichau, A.
2012

Solid state electronics, 71 (2012) S. 19 - 24

8

Journal Article

Molecular Beam Epitaxy Growth of GaAs/InAs Core-Shell Nanowires and Fabrication of InAs Nanotubes

Rieger,T.
2012

Nano letters, 12 11, S. 5559–5564

9

Journal Article

Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates

Borisova, Svetlana
2012

Crystal growth & design, 12 12, S. 6098–6103

10

Proceedings

Towards future III-nitride based THz OEICs in the UV range

Fox, Alfred
2012

11

Journal Article

Polarization sensitive terahertz imaging: detection of birefringence and optical axis

Katletz, Stefan
2012

Optics express: the international electronic journal of optics, 20 (2012) 21, S. 23025-23035

12

Journal Article

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

Gu, Changzhi
2012

Scientific reports, 2 (2012) S. 746

OpenAccess

13

Journal Article

Electrical properties of individual GaP nanowires doped by zinc

Novak, Jozef
2012

Physica status solidi / A, 209 (2012) 12, S. 2505–2509

14

Journal Article

Selected polymers on CW and pulsed THz investigations

Jarzab, P. P.
2012

Opto-electronics review, 20 (2012) 4, S. 335 - 339

15

Conference Presentation

Aharonov-Bohm-type Oscillations in GaAs/InAs Core/Shell Nanowires

Gül, Ö.
2012

16

Proceedings

Low temperature RPCVD epitaxial growth of Si 1-xGe x and Ge using Si2H6 and Ge2H6

Wirths, Stephan
2012

17

Journal Article

Unipolar behavior of asymmetrically doped strained Si 0.5Ge 0.5 tunneling field-effect transistors

Schmidt, Matthias
2012

Applied physics letters, 101 (2012) 12, S. 123501

Published under German "Allianz" Licensing conditions on 2012-09-17. Available in OpenAccess from 2012-09-17

18

Journal Article

GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Kordos, P.
2012

Semiconductor science and technology, 27 (2012) 11, S. 115002 -

19

Journal Article

Growth Studies on Quaternary AlInGaN Layers for HEMT Applicationf

Reuters, Benjamin
2012

Journal of electronic materials, 41 (2012) 5, S. 905 - 909

20

Journal Article

On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Mitrovic, I. Z.
2012

Journal of applied physics, 112 (2012) 4, S. 044102 -

Published under German "Allianz" Licensing conditions on 2012-08-21. Available in OpenAccess from 2012-08-21

Narrow Search Results