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1

Journal Article

Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors : influence of electronic effects

Semmler, U.
2001

The @journal of chemical physics, 114 (2001) S. 445 - 451

“...Erforschung neuer Materialien...”
OpenAccess

2

Talk (non-conference)

Importance of many-body effects in the clustering of charged Zn dopant atoms in GaAs

Ebert, P.
1999

“...Erforschung neuer Materialien...”

3

Talk (non-conference)

Importance of many-body effects in the clustering of charged Zn dopant atoms in GaAs

Ebert, P.
1999

“...Erforschung neuer Materialien...”

4

Journal Article

Importance of many-body effects in the clustering of charged Zn dopant atoms in GaAs

Ebert, P.
1999

Physical review letters, 83 (1999) S. 757 - 760

“...Erforschung neuer Materialien...”
OpenAccess

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