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Conference Presentation 5 Journal Article 5 Contribution to a book 3 Contribution to a conference proceedings 2

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(Keynote) Epitaxy-Based Strain-Engineering Methods for Advanced Devices

Grutzmacher, D.
2014

“...Frontiers of charge based Electronics...”

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Conference Presentation

Complementary Strained Si nanowire TFETs and Inverters

Zhao, Qing-Tai
2013

“...Frontiers of charge based Electronics...”

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Conference Presentation

Strained Si nanowire TFETs and Inverters

Zhao, Qing-Tai
2013

“...Frontiers of charge based Electronics...”

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Conference Presentation

Si compatible Tunneling Field Effect Transistors and Inverters

Mantl, Siegfried
2013

“...Frontiers of charge based Electronics...”

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Conference Presentation

Si based tunnel field effect transistors: recent achievements

Mantl, Siegfried
2013

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Conference Presentation

Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling

Knoll, Lars
2013

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Contribution to a book
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Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling

Knoll, Lars
2013

“...Frontiers of charge based Electronics...”

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Journal Article

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

Zhang, B.
2013

Nuclear instruments & methods in physics research / B, 307 (2013) S. 408 - 411

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Journal Article

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Yang, Shu
2013

Japanese journal of applied physics, 52 (2013) S. 08JN02 -

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Journal Article

Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs

Yang, Shu
2013

IEEE transactions on electron devices, 60 10, S. 3040 - 3046

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Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Liu, Linjie
2013

Applied physics letters, 103 (2013) 23, S. 231909 -

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Unipolar behavior of asymmetrically doped strained Si 0.5Ge 0.5 tunneling field-effect transistors

Schmidt, Matthias
2012

Applied physics letters, 101 (2012) 12, S. 123501

“...Frontiers of charge based Electronics...”

Published under German "Allianz" Licensing conditions on 2012-09-17. Available in OpenAccess from 2012-09-17

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Contribution to a book

Strained Nanoscaled Devices

Grützmacher, Detlev
2012

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Publications database 13 Open Access 2

Conference Presentation 5 Journal Article 5 Contribution to a book 3 Contribution to a conference proceedings 2

Zhao, Qing-Tai Mantl, Siegfried 11 Buca, Dan Mihai 8 Knoll, Lars 7 Richter, Simon 7 Nichau, Alexander 6 more ... Schäfer, Anna 6 Trellenkamp, Stefan 5 Wirths, Stephan 5 Schmidt, Maximilian 4 Blaeser, Sebastian 3 Bourdelle, 2 Bourdelle, K. K. 2 Chen, Kevin J. 2 Grützmacher, Detlev 2 Hartmann, 2 Holländer, Bernhard 2 Huang, Sen 2 Luong, Gia Vinh 2 Mussler, Gregor 2 Schnee, Michael 2 Schubert, Jürgen 2 Selmi, Luca 2 Yang, Shu 2 Breuer, Uwe 1 Feng Di, Zeng 1 Gerharz, Julian 1 Hartmann, J. -M. 1 Hartmann, J.M. 1 Jin, Lei 1 see all ... less ...

Frontiers of charge based Electronics 13

Halbleiter-Nanoelektronik; PGI-9 13 PGI-8-PT; PGI-8-PT 5 JARA-FIT; JARA-FIT 3 Analytik; ZEA-3 1 Elektronische Eigenschaften; PGI-6 1 Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology; JARA-FIT 1 more ... Mikrostrukturforschung; PGI-5 1 Weiche Materie; ICS-3 1 see all ... less ...

2013 10 2012 2 2014 1

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