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Conference Presentation 4 Contribution to a book 4 Contribution to a conference proceedings 4 Journal Article 2 Poster 2

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Conference Presentation

Asymmetric biaxial stress in patterned Si/SiGe structures after ion beam induced strain relaxation

Mantl, S.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Fabrication and Characterisation of patterned SiGe/Si lines with asymmetric biaxial stress

Buca, D.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Conference Presentation

Fabrication and Characterisation of patterned SiGe/Si lines with asymmetric biaxial stress

Buca, D.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Theory of X-ray Diffraction from Partially Relaxed SiGe/Si Layers

Trinkaus, H.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Study of Relaxation of Strain in Patterned Structures using X-Ray Diffraction Technique

Khan, A. R.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Study of Relaxation of Strain in Patterned Structures using X-Ray Diffraction Technique

Khan, A. R.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Conference Presentation

Ion channeling investigation of patterned Si/SiGe lines with asymmetric biaxial stress

Holländer, B.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Conference Presentation

Theory of X-ray Diffraction from Partially Relaxed SiGe/Si Layers

Trinkaus, H.
2006

“...Theorie III; IFF-TH-III Theorie III...”

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Journal Article

Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates

Luysberg, M.
2002

Journal of applied physics, 92 (2002) S. 4290 - 4295

“...Theorie III; IFF-TH-III Theorie III...”

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10

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Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates

Luysberg, M.
2002

“...Theorie III; IFF-TH-III Theorie III...”

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Substrate engineering by hydrogen or helium implantation for epitaxial growth of lattice mismatched Si(1-x)Gex films on silicon

Holländer, B.
2001

“...Theorie III; IFF-TH-III Theorie III...”

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Journal Article

Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

Holländer, B.
2001

Nuclear instruments & methods in physics research / B, 175/177 (2001) S. 357 - 367

“...Theorie III; IFF-TH-III Theorie III...”

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Publications database 12 Open Access 1

Conference Presentation 4 Contribution to a book 4 Contribution to a conference proceedings 4 Journal Article 2 Poster 2

Holländer, Bernhard 12 Mantl, S. 12 Trinkaus, H. 12 Buca, Dan Mihai 8 Caymax, M. 5 Lenk, Steffi 5 more ... Loo, R. 5 Bauer, G. 4 Feste, S. 4 Fichtner, P. F. P. 4 Hackbarth, T. 4 Herzog, H.-J. 4 Kirch, D. 4 Luysberg, Martina 4 Khan, A. R. 3 Stangl, J. 2 Rehman Khan, A. 1 see all ... less ...

Grundlagen für zukünftige Informationstechnologien 7 Kondensierte Materie 3 Ionentechnik 2 Festkörperforschung für die Informationstechnik 1 Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik 1

Institut für Halbleiterschichten und Bauelemente; ISG-1 Theorie III; IFF-TH-III 12 Center of Nanoelectronic Systems for Information Technology; CNI 7 Mikrostrukturforschung; IFF-IMF 4 Institut für Medizin; IME 2 Elektrokeramische Materialien; IFF-EKM 1

2006 8 2001 2 2002 2

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