Instabilities in silicon devices: silicon passivation and related instabilities. vol 0002.
Saved in:
| Personal Name(s): | Barbottin, G., editor |
|---|---|
| Imprint: |
Amsterdam :
North Holland,
1989.
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| Physical Description: |
XXII, 833 S. |
| Note: |
englisch |
| ISBN: |
9780444700162 0444700161 |
| Series Title: |
Instabilities in silicon devices ;
vol 0002. |
| Keywords: |
electrical phenomena in the bulk of SiO2 trapping and detrapping of carriers injected into SiO2. trap characterization techniques in bulk SiO2. electrical phenomena at the silicon/SiO2 interface the intrinsic states and fixed charges of the silicon/SiO2 interface. the electronic states of the silicon/SiO2 interface. the extrinsic states and fixed charges of the silicon/SiO2 interface. passivation related instabilities in modern silicon devices instabilities in bipolar devices. instabilities in field effect transistors. instabilities in double insulating layer structure. the effects of radiation on silicon devices radiation induced defects in the silicon/SiO2 structure. effects of radiation on silicon devices (stopping power, displacement, annealing). |
| Classification: | |
| Shelf Classification: |
| ZB | |
|---|---|
Reading Room  Call Number: FFP 053-02 Barcode: 1089101957
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