Skip to content
VuFind
  • 0 Items in e-Shelf (Full)
  • History
  • User Account
  • Logout
  • User Account
  • Help
    • English
    • Deutsch
  • Books & more
  • Articles & more
  • JuSER
Advanced
 
  • Literature Request
  • Cite this
  • Email this
  • Export
    • Export to RefWorks
    • Export to EndNoteWeb
    • Export to EndNote
    • Export to MARC
    • Export to MARCXML
    • Export to BibTeX
  • Favorites
  • Add to e-Shelf Remove from e-Shelf
Cover Image

Instabilities in silicon devices: silicon passivation and related instabilities. vol 0002.

Saved in:
Personal Name(s): Barbottin, G., editor
Imprint: Amsterdam : North Holland, 1989.
Physical Description: XXII, 833 S.
Note: englisch
ISBN: 9780444700162
0444700161
Series Title: Instabilities in silicon devices ; vol 0002.
Keywords: electrical phenomena in the bulk of SiO2
trapping and detrapping of carriers injected into SiO2.
trap characterization techniques in bulk SiO2.
electrical phenomena at the silicon/SiO2 interface
the intrinsic states and fixed charges of the silicon/SiO2 interface.
the electronic states of the silicon/SiO2 interface.
the extrinsic states and fixed charges of the silicon/SiO2 interface.
passivation related instabilities in modern silicon devices
instabilities in bipolar devices.
instabilities in field effect transistors.
instabilities in double insulating layer structure.
the effects of radiation on silicon devices
radiation induced defects in the silicon/SiO2 structure.
effects of radiation on silicon devices (stopping power, displacement, annealing).
Classification:
FFPE - Thin film electronic properties, semiconductor interfaces
Shelf Classification:
FFP - Physik dünner Filme
  • Holdings
  • Staff View

ZB
Reading Room Call Number: FFP 053-02 Barcode: 1089101957 Available   

  • Forschungszentrum Jülich
  • Central Library (ZB)
  • Powered by VuFind 6.1.1
Loading...