- Cite this
- Email this
Instabilities in silicon devices: silicon passivation and related instabilities. vol 0002.
|Personal Name(s):||Barbottin, G., editor|
XXII, 833 S.
Instabilities in silicon devices ;
electrical phenomena in the bulk of SiO2
trapping and detrapping of carriers injected into SiO2.
trap characterization techniques in bulk SiO2.
electrical phenomena at the silicon/SiO2 interface
the intrinsic states and fixed charges of the silicon/SiO2 interface.
the electronic states of the silicon/SiO2 interface.
the extrinsic states and fixed charges of the silicon/SiO2 interface.
passivation related instabilities in modern silicon devices
instabilities in bipolar devices.
instabilities in field effect transistors.
instabilities in double insulating layer structure.
the effects of radiation on silicon devices
radiation induced defects in the silicon/SiO2 structure.
effects of radiation on silicon devices (stopping power, displacement, annealing).