Very high speed integrated circuits : gallium arsenide LSI.
Fabrication of gallium arsenide LSI circuits
Saved in:
Personal Name(s): | Ikoma, T., editor |
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Imprint: |
Boston, MA :
Academic Pr.,
1990.
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Physical Description: |
X, 309 S. |
Note: |
englisch |
ISBN: |
0127521291 9780127521299 |
Series Title: |
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Semiconductors and semimetals ;
29. |
Keywords: |
active layer formation by ion implantation focused ion beam implantation technology gallium arsenide device fabrication process technology (MESFET technology) gallium arsenide LSI circuit design gallium arsenide LSI fabrication and performance |
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Classification: | |
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ZB | |
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Reading Room Call number: FJK 009-29 Barcode: 1090103249 Available |