Very high speed integrated circuits : heterostructure.
Saved in:
Personal Name(s): | Ikoma, T., editor |
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Imprint: |
Boston, MA :
Academic Pr.,
1990.
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Physical Description: |
X, 290 S. |
Note: |
englisch |
ISBN: |
0127521305 9780127521305 |
Series Title: |
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Semiconductors and semimetals ;
30. |
Keywords: |
fundamentals of epitaxial growth and atomic layer epitaxy characteristics of two- dimensional electron gas in III-V compound heterostructures grown by MBE metalorganic vapor phase epitaxy (MOVPE) for high quality active layers high electron mobility transistor and LSI applications hetero bipolar transistor and its LSI application (AlGaAs/GaAs HBTs) optoelectronic integrated circuits |
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ZB | |
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Reading Room Call number: FJK 009-30 Barcode: 1091104016 Available |