Oxygen in silicon.
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| Personal Name(s): | Shimura, Fumio, editor |
|---|---|
| Imprint: |
Boston, MA :
Academic Pr.,
1994.
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| Physical Description: |
XVI, 679 S. |
| Note: |
englisch |
| ISBN: |
9780127521428 0127521429 |
| Series Title: |
Semiconductors and semimetals ;
42. |
| Keywords: |
introduction to oxygen in silicon the incorporation of oxygen into silicon crystals characterization techniques for oxygen in silicon oxygen concentration measurement in silicon intrinsic point defects in silicon some atomic configurations of oxygen in silicon electrical properties of oxygen in silicon diffusion of oxygen in silicon mechanisms of oxygen precipitation in silicon: some quantitative aspects simulation of oxygen precipitation in silicon oxygen effect on mechanical properties of silicon grown- in and process- induced effects of oxygen in silicon intrinsic/internal gettering and oxygen behavior in silicon oxygen effect on electronic device performance |
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Reading Room  Call Number: FJK 009-42 Barcode: 1094102728
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