Epitaxial electronic materials : proceedings of the International School on Technology, Characterization and Properties of Epitaxial Electronic Materials, 13-24 January 1986, Miramare, Trieste, Italy / editors, A. Baldereschi, C. Paorici.
Saved in:
Personal Name(s): | Baldereschi, A. |
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Paorici, C. | |
Imprint: |
Singapore, New Jersey :
World Scientific,
1988.
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Physical Description: |
ix, 319 p. |
Note: |
englisch |
ISBN: |
9971505061 9789971505066 |
Keywords: |
surface thermodynamics, nucleation and crystal growth of thin films fundamental aspects of epitaxy Frank VanDerMerwe theory of epitaxy with anharmonic interactions chemical engineering aspects of chemical vapor deposition reactors epitaxy of II-VI compounds MOCVD growth technology of III-V semiconductor compounds kinetic striations in semiconductor crystals introduction to molecular beam epitaxy (MBE) material related problems in GaAs\GaAlAs modulation doped heterostructures molecular beam epitaxial (MBE) growth and properties of artificially layered semiconductor structures theory of electronic states in two- dimensional systems |
Classification: | |
Shelf Classification: |
ZB | |
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Reading Room Call number: FGK 029 Barcode: 1089103498 Available |