Hyperfine interaction of defects in semiconductors / edited by G. Langouche.
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Personal Name(s): | Langouche, G. |
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Imprint: |
Amsterdam, New York :
Elsevier,
1992.
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Physical Description: |
ix, 458 p. |
Note: |
englisch |
ISBN: |
044489134X (acid-free paper) |
Keywords: |
Moessbauer spectroscopy: study of extrinsic defects in semiconductors perturbed angular correlation (PAC): study of defects in semiconductors emission channeling: investigation of impurity lattice sites and defect annealing in semiconductors by ion beam channeling muon spin rotation and muon level crossing resonance: techniques for the study of muonium defects in semiconductors electron paramagnetic resonance (ESR): conventional ESR experiments for the study of point defects in semiconductors electron\nuclear double resonance (ENDOR): application to the study of defects in semiconductors optical detection of magnetic resonance (ODEPR) EPR detection with magnetic circular dichroism of absorption (MCDA) EPR and ENDOR detection with luminescence (applied to defects in semiconductors) special nuclear magnetic resonance techniques beta- radiation detected NMR (beta- NMR) optically induced nuclear polarization optically detected nuclear magnetic resonance (ODNMR) electrically detected conduction electron and nuclear spin resonance (CESR) (applied to defects in semiconductors) theory of hyperfine interactions in semiconductors: calculations of hyperfine interaction parameters at defects in semiconductors |
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Reading Room Call number: FHT 022 Barcode: 1093103313 Available |