Impurities, defects and diffusion in semiconductors: bulk and layered structures: symposium: proceedings : Fall meeting of the Materials Research Society. 1989 : Boston, MA, 27.11.89-01.12.89.
Saved in:
Personal Name(s): | Wolford, D. J., editor |
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Imprint: |
Pittsburgh, PA :
Materials Research Society,
1990.
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Physical Description: |
XXIV, 1050 S. |
Note: |
englisch |
ISBN: |
1558990518 9781558990517 |
Series Title: |
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Materials Research Society symposium proceedings ;
163. |
Keywords: |
Electronic structure of semiconductors deep levels shallow impurities native defects, complexes, transition metals in compounds complexes in silicon superlattices Impurities, defects and diffusion in semiconductors hydrogen in silicon and in III-V compounds diffusion in silicon, germanium and III-V compounds diffusion in superlattices DX centers, EL2 centers doping in III-V compounds ordering in semiconductor alloys Processing of silicon, germanium and III-V compounds |
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ZB | |
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Reading Room Call number: FAF 007-163 Barcode: 1090104229 Available |