Emerging Resistive Switching Memories [E-Book] / by Jianyong Ouyang.
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...
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Personal Name(s): | Ouyang, Jianyong, author |
Imprint: |
Cham :
Springer,
2016
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Physical Description: |
VIII, 93 p. 73 illus., 41 illus. in color. online resource. |
Note: |
englisch |
ISBN: |
9783319315720 |
DOI: |
10.1007/978-3-319-31572-0 |
Series Title: |
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SpringerBriefs in Materials
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Subject (LOC): |
- Introduction to history of memory devices and the present memory devices
- Introduction of resistive switches memory devices with nanoparticles
- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode
- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode
- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles
- Mechanisms for resistive switches
- Application of the resistive switching devices with nanoparticles.