Fundamental Aspects of Silicon Oxidation [E-Book] / edited by Yves J. Chabal.
This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the...
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Full text |
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Personal Name(s): | Chabal, Yves J., editor |
Imprint: |
Berlin, Heidelberg :
Springer,
2001
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Physical Description: |
XIII, 262 p. online resource. |
Note: |
englisch |
ISBN: |
9783642567117 |
DOI: |
10.1007/978-3-642-56711-7 |
Series Title: |
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Springer Series in Materials Science ;
46 |
Subject (LOC): |
- 1 Introduction
- 1.1 The Silicon MOSFET
- 1.2 Surface States and the Early Discoveries
- 1.3 New Technologies
- 1.4 Silicon Dioxide Growth
- 1.5 Microstructure of the Interface
- References
- 2 Morphological Aspects of Silicon Oxidation in Aqueous Solutions
- 2.1 Introduction
- 2.2 Reaction Anisotropy and the Control of Atomic-Scale Morphology
- 2.3 Extreme Anisotropy: NH4F Etching of Si(111)
- 2.4 Controlling Anisotropy: The Curious Effects of Isopropanol
- 2.5 Correlated Reactions and the Development of Mesoscale Morphologies
- 2.6 Correlated Etching: The Surprising Role of Etch Pits
- 2.7 Kinetic Structures and the Development of Etch Hillocks
- 2.8 Using Micromachined Patterns to Study Surface Chemistry
- 2.9 Conclusions and Outlook
- References
- 3 Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation
- 3.1 Introduction
- 3.2 Passive and Active Oxidation in situ in the TEM
- 3.3 Passive Oxidation as a Layer-by-Layer Process
- 3.4 Active Oxidation as a Step-Flow Process
- 3.5 Control of Surface Morphology During Device Processing
- 3.6 Electron Beam Effects During in situ Electron Microscopy
- 3.7 Conclusions
- References
- 4 Oxidation of H-Terminated Silicon
- 4.1 Introduction
- 4.2 Experimental and Analytical Details
- 4.3 Initial Stage of Oxidation of H-Terminated Si Surfaces
- 4.4 Layer-by-Layer Oxidation Reaction at the Interface
- 4.5 Oxidation-Induced Roughness of Oxide Surfaces
- 4.6 Valence Band Discontinuities at and near the Si02/Si Interface
- 4.7 Summary and Future Directions
- References
- 5 Layer-by-Layer Oxidation of Si(001) Surfaces
- 5.1 Introduction
- 5.2 Experimental Details
- 5.3 SREM Observation of the Initial Oxidation of Si(001)-2 x 1 Surfaces
- 5.4 Mechanism of Layer-by-Layer Oxidation
- 5.5 Kinetics of Initial Layer-by-Layer Oxidation
- 5.6 Furnace Oxidation at High Temperature
- 5.7 Summary
- References
- 6 Atomic Dynamics During Silicon Oxidation
- 6.1 Introduction
- 6.2 Theoretical Approach
- 6.3 Atomic Processes During Oxidation
- 6.4 Model Structure of Si(001)-SiO2 Interface
- 6.5 Model of Oxidation
- 6.6 Discussion and Conclusion
- References
- 7 First-Principles Quantum Chemical Investigations of Silicon Oxidation
- 7.1 Introduction
- 7.2 Theoretical Approach
- 7.3 Water-Induced Oxidation of Si(100)-(2 x 1)
- 7.4 Conclusions
- References
- 8 Vibrational Studies of Ultra-Thin Oxides and Initial Silicon Oxidation
- 8.1 Introduction
- 8.2 Scientific Challenges
- 8.3 Nature of Ultra-Thin Silicon Oxides and Si/SiO2 Interface
- 8.4 Water Oxidation of Si(100)-(2 x 1)
- 8.5 Conclusions
- References
- 9 Ion Beam Studies of Silicon Oxidation and Oxynitridation
- 9.1 Introduction
- 9.2 Experimental Techniques
- 9.3 Silicon Oxidation
- 9.4 Silicon Oxynitridation
- 9.5 Hydrogen in Ultrathin SiO2 Films
- References
- 10 Local and Global Bonding at the Si-SiO2 Interface
- 10.1 Introduction
- 10.2 The Oxidation Process and Local Bonding Arrangements
- 10.3 Global Bonding at the Interface
- 10.4 Z-Contrast Microscopy
- 10.5 Electron Energy Loss Spectroscopy
- References
- 11 Evolution of the Interfacial Electronic Structure During Thermal Oxidation
- 11.1 Introduction
- 11.2 Image Formation in STEM
- 11.3 Measuring Interface Roughness and Oxide Thickness
- 11.4 Mapping Interface States with EELS
- 11.5 Comparing Electronic Structure Calculations and EELS
- 11.6 Evolution of the Local Electronic Structure
- 11.7 Conclusions
- References
- 12 Structure and Energetics of the Interface Between Si and Amorphous SiO2
- 12.1 Introduction
- 12.2 Method
- 12.3 Calculation and Results
- 12.4 Discussion
- 12.5 Conclusion
- References.