Advances in Scanning Probe Microscopy [E-Book] / edited by Toshio Sakurai, Yousuke Watanabe.
This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future si...
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Full text |
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Personal Name(s): | Sakurai, Toshio, editor |
Watanabe, Yousuke, editor | |
Imprint: |
Berlin, Heidelberg :
Springer,
2000
|
Physical Description: |
XIV, 343 p. online resource. |
Note: |
englisch |
ISBN: |
9783642569494 |
DOI: |
10.1007/978-3-642-56949-4 |
Series Title: |
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Advances in Materials Research ;
2 |
Subject (LOC): |
- 1 Theory of Scanning Probe Microscopy
- 1.1 Introduction
- 1.2 Scanning Tunneling Microscopy
- 1.3 Frictional Force Microscopy
- 1.4 Dynamic-Mode Atomic Force Microscopy
- 1.5 Non-Contact Mode Atomic Force Microscopy
- 1.6 Conclusion
- References
- 2 The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors — First-Principles Electronic Structure Theory for Semiconductor Surfaces
- 2.1 Introduction
- 2.2 Computational Methods
- 2.3 Surface Structures
- 2.4 Surface Dynamics
- References
- 3 Atomic Structure of 6H-SiC (0001) and (000$$\bar{1}$$)
- 3.1 Introduction
- 3.2 Surface Preparation
- 3.3 Surface Structure of 6H-SiC (0001) and (000$$\bar{1}$$)
- 3.4 Surface Phonons of 6H-SiC (0001)
- 3.5 Effect of Surface Polarity for Gallium Adsorption onto 6H-SiC Surfaces
- 3.6 Conclusions
- References
- 4 Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces
- 4.1 Introduction
- 4.2 Experimental Aspects
- 4.3 Property Changes in the Si(111)?7x7 Surface
- 4.4 Properties of Dangling Bonds on the Si(100)?2x1?H Surface
- 4.5 Interaction of Adsorbates with Dangling Bonds on Si(100)?2x1?H Surfaces and Atomic Wire Fabrication
- 4.6 Conclusion
- References
- 5 Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies
- 5.1 Introduction
- 5.2 Fullerene Research Background
- 5.3 Universal Features of C60 and C70 STM Images
- 5.4 Dipole Field Caused by Charge Transfer
- 5.5 Photo-Induced Excited States
- 5.6 Conclusion
- Appendix: All-Electron Mixed Basis Approach
- References
- 6 Apparent Barrier Height and Barrier-Height Imaging of Surfaces
- 6.1 Introduction
- 6.2 Properties of Barrier Height
- 6.3 Measurements of Barrier Height
- 6.4 Barrier-Height Imaging
- 6.5 Applications of BH Imaging
- References
- 7 Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy
- 7.1 Introduction
- 7.2 Work Function
- 7.3 Experimental Techniques
- 7.4 Results
- 7.5 Conclusion
- References
- 8 Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces
- 8.1 Introduction
- 8.2 Semiconductor Surface Reconstruction
- 8.3 GaAs(001) As-Rich Surface
- 8.4 GaAs(001) Ga-Rich Surface
- 8.5 Other Arsenide (001) Surfaces
- 8.6 Phosphide, Antimonide and Nitride (001) Surfaces
- 8.7 Conclusions
- References
- 9 Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy
- 9.1 Introduction
- 9.2 Experiment
- 9.3 Results and Discussions on Semiconductor Substrates
- 9.4 Results and Discussions on Metal Substrates
- 9.5 Conclusions
- References.