Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices [E-Book] / edited by Eric Garfunkel, Evgeni Gusev, Alexander Vul’.
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue...
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Full text |
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Personal Name(s): | Garfunkel, Eric, editor |
Gusev, Evgeni, editor / Vul’, Alexander, editor | |
Imprint: |
Dordrecht :
Springer Netherlands,
1998
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Physical Description: |
XI, 507 p. 114 illus. online resource. |
Note: |
englisch |
ISBN: |
9789401150088 |
DOI: |
10.1007/978-94-011-5008-8 |
Series Title: |
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NATO Science Series, 3. High Technology ;
47 |
Subject (LOC): |
- Ultrathin dielectrics in silicon microelectronics — an overview
- Section 1. Recent advances in experimental studies of SiO2films on Si
- Study of the Si/SiO2interface using positrons: present status and prospects
- Medium energy ion scattering studies of silicon oxidation and oxynitridation
- Synchrotron and conventional photoemission studies of oxides and N2Ooxynitrides
- Stress in the SiO2/Si structures formed by thermal oxidation
- Section 2. Theory of the SiO2/Si and SiOxNy/Si systems
- Modeling the oxide and the oxidation process: can silicon oxidation be solved?
- Core-level shifts in Si(001)-SiO2systems: the value of first-principle investigations
- A simple model of the chemical nature of bonds at the Si-SiO2interface and its influence on the electronic properties of MOS devices
- Chemical perspectives on growth and properties of ultrathin SiO2layers
- A theoretical model of the Si/SiO2interface
- Section 3: Growth mechanism processing and analysis of (oxy)nitridation
- Spatially-selective incorporation of bonded-nitrogen into ultra-thin gate dielectrics by low-temperature plasma-assisted processing
- Isotopic labeling studies of oxynitridation in nitric oxide (NO) of Si and SiO2
- Thermal routes to ultrathin oxynitrides
- Nitrogen in ultra thin dielectrics
- Endurance of EEPROM-cells using ultrathin NO and NH3nitrided tunnel oxides
- Effects of the surface deposition of nitrogen on the oxidation of silicon
- Section 4: Initial oxidation and surface science issues
- Surface interface and valence band of ultra-thin silicon oxides
- Low temperature ultrathin dielectrics on silicon and silicon carbide surfaces: from the atomic scale to interface formation
- Interaction of O2and N2O with Si during the early stages of oxide formation
- Scanning tunneling microscopy on oxide and oxynitride formation, growth and etching of Si surfaces
- The interaction of oxygen with Si(100) in the vicinity of the oxide nucleation treshold
- Section 5: Electrical properties and microscopic models of defects
- Tunneling transport and reliability evaluation in extremely thin gate oxides
- Electrical defects at the SiO2/Si interface studied by EPR
- Towards atomic scale understanding of defects and traps in oxide/nitride/oxide and oxynitride systems
- A new model of photoelectric phenomena in MOS structures: outline and applications
- Point defect generation during Si oxidation and oxynitridation
- Optically induced switching in bistable structures: heavily doped n+- polysilicon - tunnel oxide layer - n - silicon
- Heterojunction AI/SiO2/n-Si device as an Auger transistor
- Radiation induced behavior in MOS devices
- Section 6: Hydrogen/Deuterium issues
- Hydrogenous species and charge defects in the Si-SiO2system
- The role of hydrogen in the formation reactivity and stability of silicon (oxy)nitride films
- Hydrogen-induced donor states in the MOS-system: hole traps, slow states and interface states
- Section 7: New substrates (SiC,SiGe) and SOI technologies Future trends in SiC-based microelectronic devices
- The initial phases of SiC-SiO2interface formation by low-temperature (300°C) remote plasma-assisted oxidation of Si and C faces on flat and vicinal 6H SiC
- Challenges in the oxidation of strained SiGe layers
- The current status and future trends of SIMOX/SOI, new technological applications of the SiC/SOI system
- Local tunnel emission assisted by inclusions contained in buried oxides
- Authors index
- List of workshop participants.