Intersubband Transitions in Quantum Wells: Physics and Devices [E-Book] / edited by Sheng S. Li, Yan-Kuin Su.
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in...
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Full text |
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Personal Name(s): | Li, Sheng S., editor |
Su, Yan-Kuin, editor | |
Imprint: |
Boston, MA :
Springer,
1998
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Physical Description: |
IX, 214 p. 10 illus. online resource. |
Note: |
englisch |
ISBN: |
9781461557593 |
DOI: |
10.1007/978-1-4615-5759-3 |
Subject (LOC): |
- 1 Intersubb and Emission and Lasers
- Short (? ? 3.4 ?m) and Long (? ? 11.5 ?m) Wavelength RoomTemperature Quantum Cascade Lasers
- Quantum Fountain Intersubband Laser at 15.5 ?m Wavelength in GaAs/AlGaAs Quantum Wells
- Quantum Cascade Electroluminescence in the GaAs/AlGaAs Material System
- Phase-Matched Second-Harmonic and Cascade Laser Mid-IR Sources
- Mid-Infrared Intersubband Emission and Lasing in Optically Pumped Coupled Quantum Well Structures
- Intersubband Electroluminescence from GaAs/AlGaAs Triple Barrier and Quantum Cascade Structures
- 2 Quantum Well Infrared Photodetec Tor Physics
- Quantum Well Infrared Photodetectors: Device Physics and Light Coupling
- QWIP Performance and Polarization Selection Rule
- Electric Field Distribution and Low Power Nonlinear Photoresponse of Quantum Well Infrared Photodetectors
- Intersubband Transitions of Normal Incidence N-Type Direct Bandgap Quantum Well Structures
- Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices
- Optical Response Induced By Intersubband Transitions in Quantum Wells: The Role of Multiple Reflections
- The Nature of Unintentional Deep Level Clusters Responsible for Persistent Photoconductivity Effect in GaAs/AlGaAs MQ Photodetectors
- Lateral Physical Effects in Quantum Well Infrared Photodetectors
- 3 Quantum Well and Quantum dot Infrared Detectors
- Strain-Layer Quantum Well Infrared Photodetectors
- Normal Incidence Two Color Voltage Tunable InGaAs Quantum Well Infrared Photodetectors
- Corrugated Quantum Well Infrared Photodetectors and Transistors
- Normal-incidence P-type Si/SiGe Mid-infrared Detector with Background Limited Performance up to 85 K
- Far-Infrared (?c ? 28.6 ?m) GaAs/AlGaAs Quantum Well Photodetectors
- Quantum Dots Infrared Photodetctors (QDIPs)
- Intraband Absorption Spectroscopy of Self-Assembled Quantum Dots
- Spectral Dynamics of the Intersubband Absorption in Quantum Well Structures After Ultrafast IR Excitation
- Energy Relaxation of Electrons in GaAs/AlGaAs Quantum Wells and Superlattices
- Modulated Resonant Raman Spectroscopy Induced by Intersubband Optical Excitation of the Quantum Well Bound and Continuum States
- THz Intersubband Lasers Using the Inverted Mass Scheme
- THz Time-Domain Spectroscopy of an Intersubband Plasmons
- Electrically Excited Terahertz Emission from Parabolic Quantum Wells
- Momentum Space Redistribution Time of Resonantly Photoexcited Excitons in GaAs/AlGaAs Superlattices
- 5 Qwip Focal Plane Arrays (FPAs) for IR Imaging
- 9 Micron Cutoff 640x486 GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Snap-Shot Camera
- System Considerations in the Design of QWIP-Based Thermal Imager
- Electrical and Optical Properties of 8 – 12 ?m GaAs/AlGaAs Quantum Well Infrared Photodetectors in 256 x 256 Focal Plane Arrays.