Properties of Impurity States in Superlattice Semiconductors [E-Book] / edited by C. Y. Fong, Inder P. Batra, S. Ciraci.
A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electron...
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Full text |
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Personal Name(s): | Batra, Inder P., editor |
Ciraci, S., editor / Fong, C. Y., editor | |
Imprint: |
Boston, MA :
Springer,
1988
|
Physical Description: |
351 p. online resource. |
Note: |
englisch |
ISBN: |
9781468455533 |
DOI: |
10.1007/978-1-4684-5553-3 |
Series Title: |
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NATO ASI Series, Series B: Physics ;
183 |
Subject (LOC): |
- I. Growth Techniques and Characterizations of Superlattice Semiconductors
- 1 Doping in Two Dimensions: The ?-Layer
- 2 Optical Measurements of Acceptor Concentration Profiles at GaAs/GaAlAs Quantum Well Interfaces
- 3 Molecular Beam Epitaxy of Ga0.99Be0.01As for Very High Speed Heterojunction Bipolar Transistors
- 4 Progress Report on Molecular Beam Epitaxy of III–V Semiconductors — from Fibonacci to Monolayer Superlattices
- 5 Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- 6 Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy
- II. Deep and Shallow Impurity States
- 7 Deep Level Behavior in Superlattice
- 8 Role of the Si Donors in Quantum and Ultraquantum Transport Phenomena in GaAs-GaAlAs Heterojunctions
- 9 Defects Characterization in GaAs-GaAlAs Superlattices
- 10 Studies of the DX Centre in Heavily Doped n+GaAs
- 11 Shallow and Deep Impurity Investigations: the Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures
- 12 Electronic States in Heavily and Ordered Doped Superlattice Semiconductors
- 13 Properties of Impurity States in n-i-p-i Superlattice Structures
- 14 Deep Impurity Levels in Semiconductors, Semiconductor Alloys, and Superlattices
- 15 “Pinning” of Transition-Metal Impurity Levels
- III. Quantum Well States
- 16 Theory of Impurity States in Superlattice Semiconductors
- 17 Effective-Mass Theory of Electronic States in Heterostructures and Quantum Wells
- 18 Hot Electron Capture in GaAs MQW: NDR and Photo-Emission
- 19 In-Plane Electronic Excitations in GaAs/GaAlAs Modulation Doped Quantum Wells
- 20 Resonant Tunneling in Double Barrier Heterostructures
- 21 Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells
- 22 Magneto-Optics of Excitons in GaAs-(GaAl) As Quantum Wells
- IV. Two Dimensional and Other Electronic Properties
- 23 The Influence of Impurities on the Shubnikov-De Haas and Hall Resistance of Two-Dimensional Electron Gases in GaAs/AlxGa1-xAs Heterostructures Investigated by Back-Gating and Persistent Photoconductivity
- 24 Cyclotron Resonance of Polarons in Two Dimensions
- 25 Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices
- 26 Theory of Raman Scattering from Plasmons Polaritons in GaAs/AlxGa1-xAs Superlattices
- In dex.