Gas Source Molecular Beam Epitaxy [E-Book] : Growth and Properties of Phosphorus Containing III-V Heterostructures / by Morton B. Panish, Henryk Temkin.
Saved in:
Full text |
|
Personal Name(s): | Panish, Morton B., author |
Temkin, Henryk, author | |
Imprint: |
Berlin, Heidelberg :
Springer,
1993
|
Physical Description: |
XIV, 428 p. online resource. |
Note: |
englisch |
ISBN: |
9783642781278 |
DOI: |
10.1007/978-3-642-78127-8 |
Series Title: |
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Springer Series in Materials Science ;
26 |
Subject (LOC): |
- 1. Introduction
- 1.1 Introduction to Molecular Beam Epitaxy
- 1.2 Introduction to Gas Source Molecular Beam Epitaxy
- 1.3 Why Gas Sources?
- 1.4 Heterostructures with GSMBE
- 2. Chemistry
- 2.1 Equilibrium, the Phase Diagram, and Molecular Beam Epitaxy
- 2.2 Liquid-Solid-Vapor Relationships for the Growth of InP and GaAs
- 2.3 III-V Solid Solutions
- 2.4 Group III Metalorganics — Metalorganic MBE
- 2.5 Group V Metalorganics to Replace Arsine and Phosphine
- 3. The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy
- 3.1 Background
- 3.2 Molecular Effusion: The Ideal Effusion Cell
- 3.3 Real Effusion Cells
- 3.4 Gas Sources and Their Use in GSMBE
- 3.5 Introduction of the Group III Metalorganics into the MBE System
- 4. Molecular Beam Epitaxy Systems and Procedures
- 4.1 The Conventional Growth Chamber-Configuration for ESMBE, HSMBE and MOMBE
- 4.2 System Pressure — Pumping
- 4.3 Sample Introduction, Transfer and Manipulation
- 4.4 Substrate Temperature Measurement and Control
- 4.5 Gas Handling
- 4.6 Arsine and Phosphine Generators
- 4.7 Safe Handling of Arsine and Phosphine for GSMBE
- 4.8 Procedures for GSMBE
- 4.9 The RHEED Apparatus, Growth Rate and Composition Calibration
- 4.10 Metalorganic MBE Systems — Potential for Scaleup
- 5. Doping During GSMBE
- 5.1 Background
- 5.2 Maximum Free-Carrier Concentrations in Semiconductors
- 5.3 Background Doping and Carbon Incorporation
- 5.4 Doping with Tin
- 5.5 Doping with Be
- 5.6 Zn in InP and GaInAs
- 5.7 Si in GaAs, InP and GaInAs
- 5.8 Semi-insulating InP by Fe Doping During MBE
- 6. Characterization of Heterostructures by High Resolution X-ray Diffraction
- 6.1 X-Ray Diffraction of Epitaxial Layers
- 6.2 Periodic Epitaxial Semiconductor Structures
- 6.3 High-Resolution X-Ray Diffraction
- 6.4 High-Resolution Rocking Curves of Superlattices
- 6.5 Intrinsic Strain at Heterostructure Interfaces
- 7. Optical Properties of Quantum Wells
- 7.1 Energy Levels in Quantum Wells
- 7.2 Single Quantum Wells
- 7.3 Superlattices
- 7.4 Quantum Wires and Boxes
- 7.5 Electric Field Effects
- 7.6 Strained-Layer Superlattices
- 7.7 Thermal Stability
- 8. Carrier Transport Across Quantum Wells and Superlattices
- 8.1 Experimental Techniques
- 8.2 Motion of Photo-Induced Holes
- 8.3 Sequential Screening
- 8.4 Barrier Height
- 8.5 Heterojunction Band Offsets
- 8.6 Telegraph Noise
- 9. Bipolar Transistors
- 9.1 Background
- 9.2 Figures of Merit
- 9.3 Device Fabrication
- 9.4 DC Characteristics
- 9.5 Temperature Dependence
- 9.6 Carrier Transport
- 9.7 Gain Dependence on the Base Thickness
- 9.8 Microwave Devices
- 9.9 Applications
- 10. Optoelectronic Devices
- 10.1 Broad-Area Lasers
- 10.2 Buried Heterostructure Lasers
- 10.3 Single-Frequency Lasers
- 10.4 Visible Lasers
- 10.5 Photodetectors
- 10.6 Quantum-Well Inter-sub-band Detectors
- 11. In-Situ Processing and Selective Area Epitaxy
- 11.1 Pattern Formation
- 11.2 Ion-Induced Damage
- 11.3 Towards Vacuum Lithography
- 11.4 Buried Heterostructures
- 11.5 Selective-Area Epitaxy
- References.